Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment

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  Año 2004, Vol. 531, Número 1

  • Imaging detectors and electronics¿a view of the future

    Helmuth Spieler

    págs. 1-17

    

  • Compound semiconductor radiation detectors

    A. Peacock, Alan Owens

    págs. 18-37

    

  • Experimental and simulation results of gamma imaging with hybrid pixel detectors

    E. Manach, O. Gal

    págs. 38-51

    

  • The effect of carrier diffusion on the characteristics of semiconductor imaging arrays

    J.K. Wigmore, A. Owens, A. Peacock, A.G. Kozorezov, R. den Hartog

    págs. 52-55

    

  • 3D detectors - a new direction for Medipix

    A. Blue, I. Johnston, J. Melone, S. Nenonen, P. Roy, V.A. Wright, M. Horn, K. Smith, L. Lea, M. Rahman, E. Koskiahde, V. O'Shea

    págs. 56-61

    

  • Simulation of signal generation processes in semiconductor sensor layers for Medipix1 and 2

    G. Anton, M. Mitschke, J. Giersch

    págs. 62-67

    

  • The influence of energy weighting on X-ray imaging quality

    Jürgen Giersch, Daniel Niederlöhner, Gisela Anton

    págs. 68-74

    

  • Intrinsic spatial resolution of semiconductor X-ray detectors: a simulation study

    M. Hoheisel, J. Giersch, P. Bernhardt

    págs. 75-81

    

  • Ion beam induced charge imaging of epitaxial GaN detectors

    D. Hoxley, A. Simon, M. Rahman, J. Vaitkus, E. Gaubas, W. Cunningham, A. Lohstroh, P.J. Sellin

    págs. 82-86

    

  • Multielement X-ray row detector on GaAs with spatial resolution of 108 ¿m

    T.M. Panova, A.I. Krikunov, Yu.M. Dikaev, V.F. Dvoryankin, A.A. Telegin

    págs. 87-88

    

  • X-ray imaging bilinear staggered GaAs detectors

    A.I. Krikunov, T.M. Panova, A.A. Telegin, A.G. Petrov, G.G. Dvoryankina, Yu.M. Dikaev, A.A. Kudryashov, V.F. Dvoryankin, R.A. Achmadullin

    págs. 89-91

    

  • Graded-gap Al_xGa_1-xAs analyzer of X-ray and alpha-particle spectra

    A. Silenas

    págs. 92-96

    

  • X-ray and ¿-ray detectors based on GaAs epitaxial structures

    S.M. Guschin, A.P. Vorobiev, L.S. Okaevich, O.G. Shmakov, V.P. Germogenov, O.P. Tolbanov, G.I. Ayzenshtat

    págs. 97-102

    

  • Influence of top contact topology on detection properties of semi-insulating GaAs detectors

    M. Seká¿ová, T. Ly Anh, A. Perd¿ochová, V. Ne&cbreve;as, F. Dubecký, P. Bohá&cbreve;ek, V. Pavlicová

    págs. 103-110

    

  • On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs

    P. Frigeri, R. Mosca, V. Ne¿as, E. Gombia, A. Förster, B. Za¿ko, M. Seká¿ová, P. Bohá¿ek, S. Franchi, F. Dubecký, J. Huran, P. Kordo¿

    págs. 111-120

    

  • GaAs detector material made from 3-inch wafers

    O.B. Koretskaya, O.P. Tolbanov, A.V. Tyazhev, D.L. Budnitsky, D.Y. Mokeev, L.S. Okaevich, G.I. Ayzenshtat, V.A. Novikov

    págs. 121-124

    

  • Spectroscopic response of a CdTe microstrip detector when irradiated at various impinging angles

    W. Dusi, A. Raulo, S. Vitulli, E. Perillo, G. Ventura, A. Cola, A. Donati, G. Landini

    págs. 125-133

    

  • Manufacturing and characterization of a modified four-quadrant position sensitive detector for out-door applications

    H.-E. Nilsson, G. Thungström, C. Mattsson, K. Bertilsson

    págs. 134-139

    

  • Processing and characterization of a position sensitive lateral-effect metal oxide semiconductor detector

    H. Andersson, A. Lundgren, H.-E. Nilsson, G. Thungström

    págs. 140-146

    

  • Gamma-radiation dosimetry with semiconductor CdTe and CdZnTe detectors

    V.E. Kutny, A.V. Rybka, I.M. Prokhoretz, L.N. Davydov, A.N. Orobinsky, D.V. Kutny, I.N. Shlyakhov

    págs. 147-156

    

  • Influence of powerful laser irradiation on impurity-defect structure of CdTe detector material

    I.M. Kupchak, P. Hlidek, A. Medvid¿, Yu.V. Kryuchenko, E.I. Kuznetsov, D.V. Korbutyak, S.G. Krylyuk, L.L. Fedorenko

    págs. 157-160

    

  • A mult-strip low threshold germanium detector for investigation of rare processes

    A.G. Beda

    págs. 161-164

    

  • TlBr crystal growth, purification and characterisation

    T. Prohaska, H. Sipilä, V. A. Kozlov, M. Leskelä, G. Schultheis, G. Stingeder

    págs. 165-173

    

  • Development of the technology for growing TlBr detector crystals

    I.S. Lisitsky, M.S. Kouznetsov, S.I. Zatoloka, V.V. Gostilo

    págs. 174-180

    

  • Role of electrode technology in radiation detector based on semi-insulating InP in development of detector array

    F. Dubecký, P.G. Pelfer, E. Gombia, J. Huran, R. Mosca, B. Za¿ko, V. ¿matko, P. Bohá¿ek, R. Fornari, M. Seká¿ová

    págs. 181-191

    

  • Investigation of degradation of electrical and photoelectrical properties in TlBr crystals

    J. Vaitkus, A. Mekys, S. Zatoloka, V. Gostilo, R. Jasinskaite, A. Zindulis, A. Owens

    págs. 192-196

    

  • Optical investigations of TlBr detector crystals

    I.S. Lisitskii, M.S. Kuznetsov, M. Shorohov, S. Zatoloka, V. Gostilo, L. Grigorjeva, D. Millers

    págs. 197-201

    

  • High-density hybrid interconnect methodologies

    Joachim John, Piet De Moor, Chris Van Hoof, Lars Zimmermann

    págs. 202-208

    

  • X-ray energy selected imaging with Medipix II

    J. Ludwig, K.-W. Benz, M. Fiederle, H. Braml, J.-P. Konrath, A. Zwerger, A. Fauler

    págs. 209-214

    

  • Performance of a chip for hybrid pixel detectors with two counters for X-ray imaging

    N. Bingefors, F. Edling, C. Rönnqvist, L. del Risco Norrlid, R. Brenner, K. Fransson, L. Gustafsson

    págs. 215-220