A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D physically based device simulation.

• Autores: A. Benmansour, S. Azzopardi, J.C. Martin, E. Woirgard
• Localización: Microelectronics reliability, ISSN 0026-2714, Vol. 47, Nº. 9-11, 2007, págs. 1800-1805
• Idioma: inglés
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