Two-dimensional dopant profiling in semiconductor devices by electron holography and chemical etching delineation techniques with the same specimenTwo-dimensional dopant profiling in semiconductor devices by electron holography and chemical etching delineation techniques with the same specimen.

• Autores: U. Shaislamov, J.-M. Yang, J.H. Yoo, H.-S. Seo, K.-J. Park, C.-J. Choi, T.-E. Hong, B. Yang
• Localización: Microelectronics reliability, ISSN 0026-2714, Vol. 48, Nº. 10, 2008, págs. 1734-1736
• Idioma: inglés
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