Microelectronics reliability

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  Año 2008, Vol. 48, Número 10

  • Key reliability concerns with lead-free connectors.

    T. Shibutani, J. Wu, Q. Yu, M. Pecht

    págs. 1613-1627

    

  • Fractal description of dendrite growth during electrochemical migration.

    C. Dominkovics, G. Harsányi

    págs. 1628-1634

    

  • Leakage currents and dielectric breakdown of Si1-x-yGexCy thermal oxides.

    A. Cuadras, B. Garrido, Joan Ramon Morante i Lleonart, L. Fonseca

    págs. 1635-1640

    

  • An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1 µm metal�oxide�semiconductor transistors by quasi-ballistic transport theory.

    W.S. Lau, P. Yang, V. Ho, L.F. Toh, Y. Liu, S.Y. Siah, L. Chan

    págs. 1641-1648

    

  • Accurate negative bias temperature instability lifetime prediction based on hole injection.

    A. Teramoto, R. Kuroda, S. Sugawa, T. Ohmi

    págs. 1649-1654

    

  • Negative bias temperature instability (NBTI) recovery with bake.

    A.A. Katsetos

    págs. 1655-1659

    

  • Investigation of diode geometry and metal line pattern for robust ESD protection applications.

    Y. Li, J.J. Liou, J. Vinson

    págs. 1660-1663

    

  • Effect of crystallographic defects on the reverse performance of 4H�SiC JBS diodes.

    A. Grekov, Q. Zhang, H. Fatima, A. Agarwal, T. Sudarshan

    págs. 1664-1668

    

  • High-temperature performance of AlGaN/GaN HFETs and MOSHFETs.

    D. Donoval, M. Florovic, D. Gregusová, J. Kovác, P. Kordos

    págs. 1669-1672

    

  • Saline soak tests to determine the short-term reliability of an in situ thin film resistance temperature detector.

    J.W. Post, A. Bhattacharya

    págs. 1673-1682

    

  • Characterization of defects in flexible circuits with ultrasonic atomic force microscopy.

    V. Nalladega, S. Sathish, A.S. Brar

    págs. 1683-1688

    

  • Dynamic study of the thermal laser stimulation response on advanced technology structures.

    A. Reverdy, M. De la Bardonnie, P. Poirier, H. Murray, P. Perdu, A. Boukkali

    págs. 1689-1695

    

  • Heat dissipation effect of Al plate embedded substrate in network system.

    S.H. Cho

    págs. 1696-1702

    

  • Electrothermal compact macromodel of monolithic switching voltage regulator MC34063A.

    J. Zarebski, K. Górecki

    págs. 1703-1710

    

  • High temperature reliability of aluminium wire-bonds to thin film, thick film and low temperature co-fired ceramic (LTCC) substrate metallization.

    R. Johannessen, F. Oldervoll, F. Strisland

    págs. 1711-1719

    

  • Tensile tests of micro anchors anodically bonded between Pyrex glass and aluminum thin film coated on silicon wafer.

    Y.-Q. Hu, Y.-P. Zhao, T. Yu

    págs. 1720-1723

    

  • FPGA-based switch-level fault emulation using module-based dynamic partial reconfiguration.

    P.M.-H. Lee, R. Sedaghat

    págs. 1724-1733

    

  • Two-dimensional dopant profiling in semiconductor devices by electron holography and chemical etching delineation techniques with the same specimenTwo-dimensional dopant profiling in semiconductor devices by electron holography and chemical etching delineation techniques with the same specimen.

    U. Shaislamov, J.-M. Yang, J.H. Yoo, H.-S. Seo, K.-J. Park, C.-J. Choi, T.-E. Hong, B. Yang

    págs. 1734-1736

    

  • Effects of continuously applied stress on tin whisker growth.

    C.-K. Lin, T.-H. Lin

    págs. 1737-1740

    

  • A note on �using intuitionistic fuzzy sets for fault-tree analysis on printed circuit board assembly�.

    D.-F. Li

    pág. 1741