TiO2 and Al2O3 ultra thin nanolaminates growth by ALD; instrument automation and films characterization

• Autores: H. Tiznado, D. Domínguez, Wencel de la Cruz Hernández, R. Machorro, M. Curiel, G. Soto
• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 58, Nº. 6, 2012, págs. 459-465
• Idioma: inglés
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• Resumen

  • We report on the development of a fully operational atomic layer deposition (ALD) system. this system is computer-controlled and can deposit multilayered systems without user intervention. We describe the design of manifold, reaction chamber and exhaust. Additionally we give some features of the automatization software and electronics. To evaluate the ALD performance we used as precursor trymethyl aluminum (TMA) and tetrakis (dimethylamino) titanium (TDMAT) to deposit Al2O3 and TiO2, respectively, in nanolaminated film structures. The thicknesses and composition of the films are precisely controlled, as determined by spectroscopic ellipsometry, and the nanolaminates have a sharp interface as indicated by Auger depth profile.