Simple algebraic method to study the effects of hydrostatic pressure on the fundamental parameters of a Schottky barrier of metal/n-GaAs

• Autores: O. Oubram, L.M. Gaggero Sager, I. Rodríguez Vargas
• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 61, Nº. 4, 2015, págs. 281-286
• Idioma: inglés
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• Resumen

  • The effects of hydrostatic pressure on the fundamental parameters of a Schottky barrier diode of metal/n-GaAs are studied using a simple algebraic method. The method relies on the dependence of the parameters of the semiconductor (effective mass, dielectric constant and band gap) with the hydrostatic pressure. We obtain simple expressions for the Schottky Barrier Height, Background Density and Differential Capacity that account of the hydrostatic pressure readily. In particular, the Schottky Barrier Height expression agrees qualitatively with the experimental results available. The Differential Capacity expressioin depends directly on the effective mass, opnening the possibility of determined the eeffective mass through capacitance measurements. Due to its simplicity the algebraic method could be useful in the design of devices that exploit hydrostatic pressure effects.