Modeling the threshold voltage instability in SiC MOSFETs by multiphonon-assisted tunneling

• Autores: Takuo Kikuchi, Mauro Ciappa
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 58, 2016, págs. 33-38
• Idioma: inglés
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  • Abstract Threshold voltage instability is a main reliability issue of silicon carbide MOS transistors submitted to gate bias stress. A new time and temperature-dependent TCAD model based on multiphonon-assisted tunneling is proposed. The dynamics during both stress and recovery phase are studied and are compared with experimental data.