The impact on power semiconductor device operation due to local electric field alterations in the planar junction termination

• Autores: Munaf Rahimo, Frank Richter, Fabian Fischer, Umamaheswara Vemulapati, Arnost Kopta, Chiara Corvasce, Silvan Geissmann, Marco Bellini, Martin Bayer, Friedhelm Bauer
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 58, 2016, págs. 51-57
• Idioma: inglés
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  • Abstract In this paper, we present and discuss simulation and experimental results obtained from investigating the impact of local alterations of the electric field profile in the power device planar junction termination region. Such local modifications are due to possible various extrinsic causes (manufacturing, operational or environmental) and are shown to have a critical influence on the device voltage blocking capability and reliability. The results point towards junction termination sensitivity to locally modified fields especially under voltage switching conditions due to higher leakage current densities in the modified area compared to the rest of the JT region.