How to quantify and predict long term multiple stress operation: Application to Normally-Off Power GaN transistor technologies

• Autores: A. Bensoussan
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 58, 2016, págs. 103-112
• Idioma: inglés
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  • Abstract The present paper is implementing a numerical application of the Boltzmann–Arrhenius–Zhurkov (BAZ) model and relates to the statistic reliability model derived from the Transition State Theory paradigm. It shows how the quantified tool can be applied to determine the associated effective activation energy. The unified multiple stress reliability model for electronic devices is applied to Normally-Off Power GaN transistor technologies to quantify and predict the reliability figures of this electronic type of product when operating under multiple stresses in an embedded system operating under such harsh environment conditions as set for Aerospace, Space, Nuclear, Submarine, Transport or Ground application.