Damage effects on low noise amplifiers with microwave pulses

• Autores: Cunbo Zhang, Jiande Zhang, Honggang Wang, Guangxing Du
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 60, 2016, págs. 41-47
• Idioma: inglés
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  • Abstract The damage effect experiment is carried out to the low noise amplifiers (LNAs) based on Bipolar Junction Transistor (BJT) and Pseudomorphic High Electronic Mobility Transistor (PHEMT) by microwave pulse injection experiment platform. The essence of the LNA damage with microwave pulses is the damage to the core semiconductor device. The influence rule upon the damage power of the LNA by different microwave pulse widths and pulse numbers is obtained. The injection, reflection and output waveforms are measured by high frequency oscilloscope and the typical damage waveforms of the LNA are analyzed. Inspection is made on the damaged semiconductor device by a scanning electron microscope (SEM) and the microscopic damage images of the semiconductor devices with different pulse widths and pulse numbers are analyzed in comparison.