Microelectronics reliability

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  Año 2016, Número 60

  • Editorial Board

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    págs. 1-1

    

  • Active defects in MOS devices on 4H-SiC: A critical review

    Hamid Amini Moghadam, Sima Dimitrijev, Jisheng Han, Daniel Haasmann

    • Resumen
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    págs. 1-9

    

  • Comparative study of low-frequency noise in 0.18 μm and 0.35 μm gate-length nMOSFETs with gate area of 1.1 μm2

    Chih-Chan Hu, Yuan-Fong Chou Chau, Chee Ming Lim, Kuang-Hsiung Tan

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    págs. 10-15

    

  • La2O3 gate dielectrics for AlGaN/GaN HEMT

    J. Chen, T. Kawanago, H. Wakabayashi, K. Tsutsui, H. Iwai, D. Nohata, H. Nohira, K. Kakushima

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    págs. 16-19

    

  • Analysis of temperature dependence of linearity for SiGe HBTs in the avalanche region using Volterra series

    Chie-In Lee, Yan-Ting Lin, Wei-Cheng Lin

    • Resumen
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    págs. 20-24

    

  • Time dependent modeling of single particle displacement damage in silicon devices

    Du Tang, Ignacio Martín, Chaohui He, Hang Zang, Cen Xiong, Yonghong Li, Daxi Guo, Peng Zhang, Jinxin Zhang

    • Resumen
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    págs. 25-32

    

  • Impact of NBTI induced variations on delay locked loop multi-phase clock generator

    S.R. Sriram, Bindu B.

    • Resumen
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    págs. 33-40

    

  • Damage effects on low noise amplifiers with microwave pulses

    Cunbo Zhang, Jiande Zhang, Honggang Wang, Guangxing Du

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    págs. 41-47

    

  • Identification of the degradation state for condition-based maintenance of insulated gate bipolar transistors: A self-organizing map approach

    Marco Rigamonti, Piero Baraldi, Enrico Zio, Allegra Alessi, Daniel Astigarraga Trespaderne, Ainhoa Galarza Rodríguez

    • Resumen
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    págs. 48-61

    

  • Two-photon laser-assisted device alteration in CMOS integrated circuits using linearly, circularly and radially polarized light

    M. Rutkauskas, C. Farrell, C. Dorrer, K.L. Marshall, T. Crawford, T.R. Lundquist, P. Vedagarbha, K. Erington, D. Bodoh, D.T. Reid

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    págs. 62-66

    

  • A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors

    Mingzhi Dai

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    págs. 67-69

    

  • A transient noise simulation model for the analysis of the optimal number of stages of the analog accumulator in TDI CMOS image sensors

    Kaiming Nie, Jianxin Li, Zhiyuan Gao, Jiangtao Xu

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    págs. 70-77

    

  • Improvement of multicores throughput based on environmental conditions

    Piotr Kocanda, Andrzej Kos

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    págs. 78-83

    

  • Atmospheric corrosion resistance of electroplated Ni/Ni–P/Au electronic contacts

    Vinod K. Murugan, Zhigang Jia, Govindo J. Syaranamual, Chee Lip Gan, Yizhong Huang, Zhong Chen

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    págs. 84-92

    

  • Pulse plated silver metallization on porosified LTCC substrates for high frequency applications

    Frank Steinhäußer, Armin Talai, Gabriela Sandulache, Robert Weigel, Alexander Koelpin, Wolfgang Hansal, Achim Bittner, Ulrich Schmid

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    págs. 93-100

    

  • Improvement of reliability for high-ohmic Cr–Si thin film resistors in a heat and humid environment: Removing moisture source by electrocatalytic decomposition of water

    X. Y. Wang, Q. Cheng, X.P. Ma, H. Zhang, M.X. Li, T.N. Chen, G.P. Zhang, J.Q. Shao

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    págs. 101-108

    

  • An examination on the direct concentration approach to simulating moisture diffusion in a multi-material system

    Dapeng Liu, Jing Wang, Ruiyang Liu, S.B. Park

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    págs. 109-115

    

  • Reliability modeling of Sn–Ag transient liquid phase die-bonds for high-power SiC devices

    Adeel Ahmad Bajwa, Jürgen Wilde

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    págs. 116-125

    

  • Effect of nano-Al2O3 reinforcement on the microstructure and reliability of Sn–3.0Ag–0.5Cu solder joints

    Zhenyu Zhao, Lei Liu, Hyun Seok Choi, Jian Cai, Qian Wang, Yuming Wang, Guisheng Zou

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    págs. 126-134

    

  • Flux effect on void quantity and size in soldered joints

    D. Bušek, K. Dušek, D. Růžička, M. Plaček, P. Mach, J. Urbánek, J. Starý

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    págs. 135-140

    

  • Integrating physical level design and high level synthesis for simultaneous multi-cycle transient and multiple transient fault resiliency of application specific datapath processors

    Deepak Kachave, Anirban Sengupta

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    págs. 141-152

    

  • KITO tool: A fault injection environment in Linux kernel data structures

    Alejandro David Velasco, Bartolomeo Montrucchio, Maurizio Rebaudengo

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    págs. 153-162