Compact distributed multi-finger MOSFET model for circuit-level ESD simulation

• Autores: Kuo-hsuan Meng, Zaichen Chen, Elyse Rosenbaum
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 63, 2016, págs. 11-21
• Idioma: inglés
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• Resumen

  • Abstract This work presents a model for multi-finger MOSFETs operating under ESD conditions. It is a distributed model that can reproduce the effect of layout geometry on trigger voltage, on-state resistance, and non-uniform turn-on of device fingers. A three-terminal transmission line pulsing technique enables model parameter extraction. Analysis of measurement data and TCAD simulation reveals that self-heating is not uniform across the device, and this affects the relation between on-state resistance and the number of fingers. With self-heating incorporated, the model correctly reproduces the device I–V curve up to high current levels.