Microelectronics reliability

• 

  Año 2016, Número 63

  • Editorial Board

    págs. 1-1

    

  • Drain current model for short-channel triple gate junctionless nanowire transistors

    B.C. Paz, M. Casse, Sylvie Barraud, G. Reimbold, O. Faynot, F. Avila-Herrera, A. Cerdeira, M. Pavanello

    • Resumen

    págs. 1-10

    

  • Compact distributed multi-finger MOSFET model for circuit-level ESD simulation

    Kuo-hsuan Meng, Zaichen Chen, Elyse Rosenbaum

    • Resumen

    págs. 11-21

    

  • Applications of the pulsed current-voltage (I-V) and capacitance-voltage (C-V) techniques for high-resistive gates in MOSFETs

    LiLung Lai, Xiaojing Wu

    • Resumen

    págs. 22-30

    

  • Temperature-dependent resistive switching characteristics for Au/n-type CuAlOx/heavily doped p-type Si devices

    Yow-Jon Lin, Yu-Ju Chu

    • Resumen

    págs. 31-36

    

  • Reliability/Uniformity improvement induced by an ultrathin TiO2 insertion in Ti/HfO2/Pt resistive switching memories

    Ran Jiang, Zuyin Han, Xianghao Du

    • Resumen

    págs. 37-41

    

  • Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes

    M.S. Hadi, N. Sugii, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima

    • Resumen

    págs. 42-45

    

  • Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy

    Xiang Zheng, Shiwei Feng, Yamin Zhang, Junwei Yang

    • Resumen

    págs. 46-51

    

  • Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current

    J. Chen, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima

    • Resumen

    págs. 52-55

    

  • ELDRS in SiGe transistors for room and low-temperature irradiation

    V.S. Pershenkov, A.S. Bakerenkov, V.A. Felitsyn, A.S. Rodin, V.A. Telets, V.V. Belyakov

    • Resumen

    págs. 56-59

    

  • Pump chip and phosphor reliability of broadband light-emitting diodes

    Faiz Rahman, Jason T. Wright

    • Resumen

    págs. 60-67

    

  • Microstructural and thermal characterizations of light-emitting diode employing a low-temperature die-bonding material

    Tzu-Hao Wang, Hsuan Lee, Chih-Ming Chen, Ming-Guan Chen, Chi-Chang Hu, Yu-Jie Chen, Ray-Hua Horng

    • Resumen

    págs. 68-75

    

  • Chip package interaction for LED packages

    Sung-Uk Zhang

    • Resumen

    págs. 76-81

    

  • Experimental investigation of temperature and relative humidity effects on resonance frequency and quality factor of CMOS-MEMS paddle resonator

    Mohammad Tariq Jan, Farooq Ahmad, Nor Hisham B. Hamid, Mohd Haris B. Md Khir, Muhammad Shoaib, Khalid Ashraf

    • Resumen

    págs. 82-89

    

  • Wafer level measurements and numerical analysis of self-heating phenomena in nano-scale SOI MOSFETs

    Giacomo Garegnani, Vincent Fiori, Gilles Gouget, Frederic Monsieur, Clement Tavernier

    • Resumen

    págs. 90-96

    

  • Evaluation of SiC MOSFET power modules under unclamped inductive switching test environment

    Muhammad Nawaz

    • Resumen

    págs. 97-103

    

  • Thermal characterization of planar high temperature power module packages with sintered nanosilver interconnection

    David Berry, Adrian Townsend, Weikun He, Hanguang Zheng, Khai D.T. Ngo, Guo-Quan Lu

    • Resumen

    págs. 104-110

    

  • Reliability analysis of 3D heterogeneous microsystem module by simplified finite element model

    Meng-Kao Yeh, Chun-Lin Lu

    • Resumen

    págs. 111-119

    

  • Effects of oxidation on reliability of screen-printed silver circuits for radio frequency applications

    Dae Up Kim, Kwang-Seok Kim, Seung-Boo Jung

    • Resumen

    págs. 120-124

    

  • Microstructural evolution of sintered silver at elevated temperatures

    Seyed Amir Paknejad, Ali Mansourian, Julian Greenberg, Khalid Khtatba, Linde Van Parijs, S.H. Mannan

    • Resumen

    págs. 125-133

    

  • Modified single cantilever adhesion test for EMC/PSR interface in thin semiconductor packages

    Kenny Mahan, Byung Kim, Bulong Wu, Bongtae Han, Ilho Kim, Hojeong Moon, Young Nam Hwang

    • Resumen

    págs. 134-141

    

  • Fabrication and stress analysis of annular-trench-isolated TSV

    Wei Feng, Tung Thanh Bui, Naoya Watanabe, Haruo Shimamoto, Masahiro Aoyagi, Katsuya Kikuchi

    • Resumen

    págs. 142-147

    

  • Investigation into sand mura effects of a-IGZO TFT LCDs

    Xiang Liu, Hehe Hu, Ce Ning, Guangliang Shang, Wei Yang, Ke Wang, Xinhong Lu, Woobong Lee, Gang Wang, Jianshe Xue, Jung mok Jun, Shengdong Zhang

    • Resumen

    págs. 148-151

    

  • Degradation of a sintered Cu nanoparticle layer studied by synchrotron radiation computed laminography

    Masanori Usui, Hidehiko Kimura, Toshikazu Satoh, Takashi Asada, Satoshi Yamaguchi, Masashi Kato

    • Resumen

    págs. 152-158

    

  • Investigation on the CPU nanofluid cooling

    Mohsen H. Al-Rashed, Grzegorz Dzido, Mateusz Korpyś, Jacek Smolka, Janusz Wójcik

    • Resumen

    págs. 159-165

    

  • Mechanical analysis of wafer testing with FEM simulations

    Angel Ochoa Brezmes, Cornelia Breitkopf

    • Resumen

    págs. 166-182

    

  • Protrusion of electroplated copper filled in through silicon vias during annealing process

    Si Chen, Fei Qin, Tong An, Pei Chen, Bing Xie, Xunqing Shi

    • Resumen

    págs. 183-193

    

  • Drop-shock reliability improvement of embedded chip resistor packages through via structure modification

    Se Hoon Park, Jong Chul Park, Jae-Yong Park, Young-Ho Kim

    • Resumen

    págs. 194-200

    

  • Band diagram for low-k/Cu interconnects: The starting point for understanding back-end-of-line (BEOL) electrical reliability

    Michael J. Mutch, Thomas Pomorski, Brad C. Bittel, Corey J. Cochrane, P.M. Lenahan, Xin Liu, Robert J. Nemanich, Justin Brockman, Marc French, Markus Kuhn, Benjamin French, S.W. King

    • Resumen

    págs. 201-213

    

  • Interfacial evolution and bond reliability in thermosonic Pd coated Cu wire bonding on aluminum metallization: Effect of palladium distribution

    Adeline B.Y. Lim, Chris B. Boothroyd, Oranna Yauw, Bob Chylak, Chee Lip Gan, Zhong Chen

    • Resumen

    págs. 214-223