Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current

• Autores: J. Chen, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 63, 2016, págs. 52-55
• Idioma: inglés
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• Resumen

  • Abstract AlGaN/GaN HEMT with a BF2-implanted polycrystalline Si gate has been characterized through comparison to TiN gate electrodes. Positive threshold voltage (Vth) shift was observed with the addition of F ions, which in turn degraded the effective electron mobility (μeff) by diffusion into the AlGaN/GaN interface and GaN layer. A large reduction in gate leakage current (Jg) was achieved and the property was maintained even after strong reverse-bias stressing. No additional degradation in μeff was observed, suggesting the formation of a stable poly-Si/AlGaN interface. Therefore, poly-Si gate electrodes have advantages in reducing the Jg and robustness against reverse-bias stressing.