Reliability/Uniformity improvement induced by an ultrathin TiO2 insertion in Ti/HfO2/Pt resistive switching memories

• Autores: Ran Jiang, Zuyin Han, Xianghao Du
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 63, 2016, págs. 37-41
• Idioma: inglés
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• Resumen

  • Abstract Reliability/Uniformity of resistance switching in Ti/HfO2/Pt memory structure was improved by inserting an interfacial layer of 5 nm-thick TiO2 between Ti and 45 nm-thick HfO2. As a native oxide of Ti, TiO2, effectively limits the disorder migration of oxygen from HfO2 to Ti layer, and provides the more chemically-stable and morphologically-uniform interfaces with both the Ti electrode and the HfO2 layer. Meanwhile, more stable resistive switching was observed in Ti/TiO2/HfO2/Pt than that in Ti/HfO2/Pt memory, and the random variation during endurance test observed in Ti/HfO2/Pt was also greatly limited in Ti/TiO2/HfO2/Pt memory. From these results, a thin TiO2 insertion between the Ti electrode with the HfO2 active layer, could greatly improve the reliability/uniformity of the Ti/HfO2/Pt memory devices.