Read static noise margin aging model considering SBD and BTI effects for FinFET SRAMs

• Autores: Kolsoom Mehrabi, Behzad Ebrahimi, Roohollah Yarmand, Ali Afzali-Kusha, Hamid Mahmoodi
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 65, 2016, págs. 20-26
• Idioma: inglés
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• Resumen

  • Abstract In this paper, an accurate aging model for Read Static Noise Margin (RSNM) of conventional 6 transistors (6T) FinFET SRAM cell is presented. The model, which is developed based on accurate I-V formulation suitable for FinFET, considers soft oxide breakdown (SBD) as well as bias temperature instability (BTI) effects. The accuracy of the model is verified by comparing its results with those of HSPICE simulations for the 14 nm and 10 nm technologies. The results show the maximum errors of 0.63% and 0.54% for the 14 nm and 10 nm technologies, respectively, when averaged over a wide range of stress times and supply voltages. The model also may be used to accurately predict the cumulative distribution function of the RSNM in the presence of the process variation with a very small error compared to the one obtained from the Monte Carlo approach with a considerably short runtime.