Microelectronics reliability

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  Año 2016, Número 65

  • Editorial Board

    págs. 1-1

    

  • RoHS compliance in safety and reliability critical electronics

    Elviz George, Michael Pecht

    • Resumen

    págs. 1-7

    

  • A Wiener process model for accelerated degradation analysis considering measurement errors

    Junxing Li, Zhihua Wang, Xia Liu, Yongbo Zhang, Huimin Fu, Chengrui Liu

    • Resumen

    págs. 8-15

    

  • Off-state degradation with ac bias in PMOSFET

    Segeun Park, Hyuckchai Jung, Jeonghoon Oh, Ilgweon Kim, Hyoungsun Hong, Gyoyoung Jin, Yonghan Roh

    • Resumen

    págs. 16-19

    

  • Read static noise margin aging model considering SBD and BTI effects for FinFET SRAMs

    Kolsoom Mehrabi, Behzad Ebrahimi, Roohollah Yarmand, Ali Afzali-Kusha, Hamid Mahmoodi

    • Resumen

    págs. 20-26

    

  • Phase displacement study in MOSFET based ring VCOs due to heavy-ion irradiation using 3D-TCAD and circuit simulation

    Maran Ponnambalam, N. Vinodhkumar, R. Srinivasan, Premanand Venkatesh Chandramani

    • Resumen

    págs. 27-34

    

  • Charge trapping related channel modulation instability in P-GaN gate HEMTs

    Xueyang Li, Gang Xie, Cen Tang, Kuang Sheng

    • Resumen

    págs. 35-40

    

  • Experimental study of bias dependence of pulsed laser-induced single-event transient in SiGe HBT

    Yabin Sun, Jun Fu, Yudong Wang, Wei Zhou, Zhihong Liu, Xiaojin Li, Yanling Shi

    • Resumen

    págs. 41-46

    

  • Study of process induced variability of germanium-pTFET in analog and RF domain

    Sayani Ghosh, Kalyan Koley, Chandan K. Sarkar

    • Resumen

    págs. 47-54

    

  • The fast neutron irradiation influence on the AlGaAs IR-LEDs reliability

    A.V. Gradoboev, K.N. Orlova, I.A. Asanov, A.V. Simonova

    • Resumen

    págs. 55-59

    

  • Electrical conduction mechanisms in the temperature-dependent current-voltage characteristics of poly(3-hexylthiophene)/n-type Si devices

    Hong-Zhi Lin, Yow-Jon Lin

    • Resumen

    págs. 60-63

    

  • Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications

    R.P. Shi, X. D. Huang, Johnny K.O. Sin, P.T. Lai

    • Resumen

    págs. 64-68

    

  • Lifetime estimation for IGBT modules in wind turbine power converter system considering ambient temperature

    Xiong Du, Jun Zhang, Gaoxian Li, Heng Ming Tai, Pengju Sun, Luowei Zhou

    • Resumen

    págs. 69-78

    

  • A hybrid prognostics approach for MEMS: From real measurements to remaining useful life estimation

    H. Skima, K. Medjaher, C. Varnier, E. Dedu, J. Bourgeois

    • Resumen

    págs. 79-88

    

  • Economical design of H-bridge multilevel inverter drive controlled by modified fast algorithm

    Jamal Abdul-Kareem Mohammed

    • Resumen

    págs. 89-97

    

  • Optimization and validation of thermal management for a RF front-end SiP based on rigid-flex substrate

    Peng Wu, Fengze Hou, Cheng Chen, Jun Li, Fengman Liu, Jing Zhang, Liqiang Cao, Lixi Wan

    • Resumen

    págs. 98-107

    

  • Thermo-mechanical simulation of PCB with embedded components

    W. Kpobie, M. Martiny, S. Mercier, F. Lechleiter, L. Bodin, A. Lecavelier des Etangs-Levallois, M. Brizoux

    • Resumen

    págs. 108-130

    

  • Using Taguchi method to obtain the optimal design of heat dissipation mechanism for electronic component packaging

    De-Shau Huang, Wen-Bin Tu, Xiu-Ming Zhang, Liang-Te Tsai, Ti-Yuan Wu, Ming-Tzer Lin

    • Resumen

    págs. 131-141

    

  • RF measurements to pinpoint defects in inkjet-printed, thermally and mechanically stressed coplanar waveguides

    Sami Myllymäki, Jussi Putaala, Jari Hannu, Esa Kunnari, Matti Mäntysalo

    • Resumen

    págs. 142-150

    

  • Electromechanical reliability of a flexible metal-grid transparent electrode prepared by electrohydrodynamic (EHD) jet printing

    Sang Min Yang, Yo Seb Lee, Yonghee Jang, Doyoung Byun, Sung-Hoon Choa

    • Resumen

    págs. 151-159

    

  • Thickness-dependent non-Fickian moisture absorption in epoxy molding compounds

    K.J. Wong, K.O. Low, H.A. Israr, M.N. Tamin

    • Resumen

    págs. 160-166

    

  • Characterization on acceleration-factor equation for packaging-solder joint reliability

    K.-C. Wu, K.-N. Chiang

    • Resumen

    págs. 167-172

    

  • Mechanisms and solutions to the brittle solder joint in electroless Ni plating

    Xuan Wang, C.-K. Chung

    • Resumen

    págs. 173-177

    

  • Influence of local thermal dissipation on electromigration in an Al thin-film line

    Yuan Li, Hsin-Tzu Lee, Masumi Saka

    • Resumen

    págs. 178-183

    

  • Ball-grid-array solder joint model for assembly-level impact reliability prediction

    Chee Kuang Kok, Wen Jie Ng, Chin Chin Ooi, Kia Wai Liew

    • Resumen

    págs. 184-191

    

  • Defect inspection of solder bumps using the scanning acoustic microscopy and fuzzy SVM algorithm

    Mengying Fan, Li Wei, Zhenzhi He, Wei Wei, Xiangning Lu

    • Resumen

    págs. 192-197

    

  • The stress analysis and parametric studies for the low-k layers of a chip in the flip-chip process

    Lin Lin, Jun Wang, Lei Wang, Wenqi Zhang

    • Resumen

    págs. 198-204

    

  • Lattice Boltzmann method study of effect three dimensional stacking-chip package layout on micro-void formation during encapsulation process

    M.H.H. Ishak, M.Z. Abdullah, Aizat Abas

    • Resumen

    págs. 205-216

    

  • Rotational solder self-alignment mechanics modeling for a flip chip in the presence of a viscous fluid

    Brett Fennell, Sangil Lee, Daniel F. Baldwin

    • Resumen

    págs. 217-224

    

  • Delamination of bonding Interface between benzocyclobutene (BCB) and silicon dioxide/silicon nitride

    Fan Bu, Qing Ma, Zheyao Wang

    • Resumen

    págs. 225-233