Optimization and validation of thermal management for a RF front-end SiP based on rigid-flex substrate

• Autores: Peng Wu, Fengze Hou, Cheng Chen, Jun Li, Fengman Liu, Jing Zhang, Liqiang Cao, Lixi Wan
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 65, 2016, págs. 98-107
• Idioma: inglés
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• Resumen

  • Abstract This paper mainly presents a new 3D stacking RF System-in-Package (SiP) structure based on rigid-flex substrate for a micro base station, with 33 active chips integrated in a small package of 5cm × 5.5cm × 0.8cm. Total power consumption adds up to 20.1 Watt. To address thermal management and testability difficulties of this RF SiP, a thermal test package is designed with the same package structure and assembly flow, only replacing active chips with thermal test dies (TTDs). Optimization and validation of thermal management for the thermal test package is conducted. Effects of the structure, chip power distribution, and ambient temperature aspects on the thermal performance are studied. Thermal vias designed in the organic substrate provide a direct heat dissipation path from TTDs to the top heatsink, which minimizes junction temperature gap of the top substrate from 31.2 °C to 5.3 °C, and enables junction temperatures of all the chips on the face to face structure to be well below 82 °C. Chip power distribution optimization indicates placing high power RF parts on the top rigid substrate is a reasonable choice. The ambient temperature optimizes with forced air convection and cold-plate cooling method, both of which are effective methods to improve thermal performances especially for this micro base station application where environment temperature may reach more than 75 °C. The thermal management validation is performed with a thermal test vehicle. Junction temperatures are compared between finite-volume-method (FVM) simulation and thermal measurement under the natural convection condition. The accordance of simulation and measurement validates this thermal test method. Junction temperatures of typical RF chips are all below 80 °C, which shows the effectiveness of thermal management of this RF SiP.