The distributed thermal model of fin field effect transistor

• Autores: Mariusz Zubert, Tomasz Raszkowski, Agnieszka Samson, Marcin Janicki, Andrzej K. T. Napieralski
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 67, 2016, págs. 9-14
• Idioma: inglés
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• Resumen

  • Abstract This paper demonstrates the thermal analysis of the modern Fin-FET transistor manufactured in 12 nm technology node. The analyzed structure is based on the microchip which was developed by Samsung Group and which was applied in modern electronic structures using the 14 nm Samsung Low Power Early technology. The investigated structure consists of the fourfold Fin-FET transistor and contains its ambient. Moreover, the different dynamics of the temperature changing is demonstrated what is the significant issue in power management. The explanation of the character of the crystal lattice, in which distances between nodes are smaller than the average length of the phonon free path, is included. The technical specification of the investigated structure as well as die layers and their material parameters are described. Furthermore, the description of the prepared thermal model is demonstrated. The temperature simulations are carried out using the Finite Difference Method. The simulation results are presented and discussed in detail.