Metal defect localization of GaAs or Si based ICs by dynamic emission microscopy

• Autores: Xuanlong Chen, Liyuan Liu, Enliang Li
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 72, 2017, págs. 24-29
• Idioma: inglés
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• Resumen

  • Abstract Metal defect has become one of the major failure mechanisms of integrated circuit, whose localization might need skillful techniques in failure analysis, especially within function issues. Popular failure analysis method has been suggested for about two decades, such as PEM and laser stimulation microscopy. Most of the reported works are based on CMOS silicon substrate ICs, and mostly for frontside analysis by dynamic method. Since Gallium Arsenide (GaAs) based integrated circuit is developing very fast, the failures are also bringing challenges. Conventional dynamic method should be implemented in accordance with GaAs features. Emission characteristics of GaAs based pseudomorphic HEMT (PHEMT) and silicon based ICs were discussed in this paper corresponding to some possible consequences caused by metal defect. We proposed a dynamic emission microscopy method to solve the GaAs based high speed digital circuit open failure consist of DCFL inverters and performed a backside analysis on silicon based flipchip IC with metal bridge defect.