Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures

• Autores: N. Moultif, E. Joubert, M. Masmoudi, O. Latry
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 76-77, 2017, págs. 243-248
• Idioma: inglés
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• Resumen

  • Abstract This paper presents a reliability study of a 1.2 kV SiC MOSFET under HTRB (High Temperature Reverse Bias stress by the photon emission (PE) and the spectral photon emission (SPE) techniques. The electrical characteristics analysis suggests failures related to the PN junction degradation. This hypothesis is confirmed by the PE and SPE techniques.