A comparative study on electrothermal characteristics of nanoscale multiple gate MOSFETs

• Autores: Qi-Lin Gu, Peng Zhang, Yi Ru, Hao Song, Wen-Sheng Zhao, Wen-Yan Yin
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 78, 2017, págs. 362-369
• Idioma: inglés
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• Resumen

  • Abstract Multiple-gate (MG) MOSFETs are promising candidates for next-generation integrated circuits technology. This paper presents the electrothermal characterization of three-type nanoscale MG MOSFETs, i.e., Π-gate, quadruple-gate (QG), and Ω-gate MOSFETs. Meanwhile, the temperature distribution of a real Ω-gate MOSFET with gradual channel width is also studied. Finite difference method (FDM) is adopted to solve the 3-D time-dependent heat conduction equations. The simulation results of the steady-state temperature distribution are validated against the commercial software COMSOL. Moreover, the transient temperature response of MG MOSFETs to different waveforms are also captured and compared.