Single-event multiple transients in guard-ring hardened inverter chains of different layout designs

• Autores: Wen Zhao, Chaohui He, Wei Chen, Rongmei Chen, Peitian Cong, Fengqi Zhang, Zujun Wang, Chen Shen, Lisang Zheng, Xiaoqiang Guo, Lili Ding
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 87, 2018, págs. 151-157
• Idioma: inglés
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• Resumen

  • Single-event multiple transients (SEMTs) measurement based on an on-chip self-triggered method is performed. Measurement results for guard-ring hardened inverter chains of two layout designs, including a source/drain sharing design and a conventional design, are compared under pulsed laser irradiation. Pulsed laser exposures with different energies show that the guard-ring hardened inverter chain with a source/drain sharing design is more sensitive to single-event double transients (SEDTs). It is found that SEDTs with small temporal differences can be merged into single-event single transients (SESTs) thanks to the pulse broadening effect. A layout-hardened design for SEDTs in the guard-ring hardened inverter chain is also suggested.