Resumen de Characterization of high mobility inverted coplanar Zinc Nitride thin-film transistors
M.A. Domínguez-Jiménez, José Luis Pau Vizcaino, O. Obregón, A. Luna, Andrés Redondo Cubero
In this work, high mobility thin-film transistors based on zinc nitride (Zn_(3)N_(2)) sputtered at room temperature using spin-on glass (SOG) as gate dielectric are presented. The inverted coplanar structure is used for the Zn_(3)N_(2) thin-film transistors. The devices exhibit an on/off-current ratio of 10^(6) and a subthreshold slope of 0.88 V/decade. The extracted field-effect mobility was 15.8 cm^(2) /Vs which is among the highest reported for Zn_(3)N_(2) thin-film transistors. In addition, n-type MOS capacitors were fabricated and characterized by capacitance-voltage and capacitance-frequency measurements to evaluate the dielectric characteristics of the SOG film.
