Resumen de Inhibition grain growth and electrical properties by adding In2O3 to SnO2-Co3O4-Ta2O5 ceramics
M. Olvera Sánchez, M. B. Hernández, S. García Villarreal, E. Rodríguez, C. Gómez Rodríguez, Linda Viviana García Quiñonez, J. A. Aguilar Martínez
In this contribution, the effect of In_(2)O_(3) additions on the microstructure, physical and electrical properties of the Sn_(2)-Co_(3)O_(4)-Ta_(2)O_(5) ceramic system was investigated. Because the effect of In_(2)O_(3) has been studied typically at low levels, special attention has been paid to the effect of high levels (1 and 2 mol % In_(2)O_(3)) in the ceramics. Results show that up to 0.1 mol % In_(2)O_(3), an increase of indium oxide content is correlated with grain size reduction and an increase of the nonlinearity coefficient (α) and breakdown voltage (EB), producing an augmentation by a factor of 2 in the nonlinearity coefficient and an increment by a factor of 8 in the breakdown voltage. However, shrinkage (γ) and measured density are not influenced by the addition of indium oxide. For samples with 1 and 2 mol % In_(2)O_(3), in non-calcined condition, In_(2)O_(3) is present with cubic structure. However, in calcined specimens, In_(2)O_(3) is not detected anymore and son_(2)-crystal structure undergoes a change from tetragonal to cubic. These ceramic samples exhibit high resistivity, behaving like dielectric materials.
