Resumen de Solutions of q-deformed multiple-trapping model (MTM) for charge carrier transport from time-of-flight transient (TOF) photo-current in amorphous semiconductors
F. Serdouk, A. Boumali, A. Makhlouf, M. L. Benkhedir
The aim of this paper is to investigate the description of the q-deformed multiple-trapping equation for charge carrier transport in amorphous semiconductors. We first modify the multiple-trapping model of charge carriers in amorphous semiconductors from time-of-flight transient photo-current in the framework of the q-derivative formalism, and then we construct our simulated current by using an approach based on the Laplace method. It is implemented in a program proposed recently by [14] which allows us to construct a current using the Padé approximation expansion. Furthermore, we study the influence of the parameter q of the q-calculus formalism on the drift mobility.
