Phosphorus ion implantation and POCl<sub>3</sub> doping effects of n<sup>+</sup>-polycrystalline-silicon/high-k gate dielectric (HfO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub>) films
Autores:Dietrich Jihoon Choi, Dietrich Doo Seok Jeong, Dietrich Chihoon Lee, Dietrich Moonju Cho