Oana Moldovan, François Lime, Bogdan Mihai Nae, Benjamín Iñiguez Nicolau
In this paper we present a simple compact model for the computation of the drain current in a new type of transistor, a junctionless VBT (Variable Barrier Transistor).A good agreement between our results and two TCAD simulation tools (COMSOL and ATLAS), proves the accuracy of this model. It is the first time that a compact drain current model is derived for this type of transistor.
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