págs. 545-546
Microstructure and composition of annealed Al/Ti-metallization layers
T. Gemming, M. Hofmann
págs. 547-553
C. Angelkort, A. Berendes, O. Brunkahl
págs. 554-567
Comparison of the annealing behavior of thin Ta films deposited onto Si and SiO~2 substrates
R. Hubner, M. Hecker, Volker Hoffmann, N. Mattern
págs. 568-575
Analytical investigations of tunnel magnetoresistance layers
J. Thomas, R. Reiche, H. Vinzelberg
págs. 576-581
Direct observation of reconstruction induced changes of surface stress for Sb on Si(111)
P. Kury, M. Horn-von Hoegen, P. Zahl
págs. 582-587
Characterizing single crystal surfaces using high resolution electron diffraction
D. Thien, F.-J. Meyer zu Heringdorf
págs. 588-593
T. Wittkowski
págs. 594-598
Quantitative SIMS depth profiling of diffusion barrier gate-oxynitride structures in TFT-LCDs
P. Wilhartitz, S. Dreer
págs. 599-604
V. Vassileva, H. Danninger, D. Krecar
págs. 605-609
D. Krecar, V. Vassileva, H. Danninger
págs. 610-618
Hardness and phase analysis of IN 718 deformed at high strain rate
S. Guder, L. Renhof, E. Werner
págs. 619-621
Ion-beam analysis of CuInSe~2 solar cells deposited on polyimide foil
D. Spemann, M. Lorenz
págs. 622-627
págs. 628-639
Qualitative and quantitative determination of microinclusions by automated SEM/EDX analysis
W. Wegscheider, M. Nuspl
págs. 640-645
págs. 646-652
Low-temperature investigation of the growth mechanism of alkylsiloxane self-assembled monolayers
G. Friedbacher, J. Foisner, A. Glaser
págs. 653-657
págs. 658-667
J. P. Douet, M. Castroviejo
págs. 668-673
Micro-Raman analysis of coloured lithographs
P. Vandenabeele, K. Castro, M. D. Rodriguez-Laso
págs. 674-683
págs. 684-699
págs. 700-706
J. A. Kershaw, O. Nekrassova
págs. 707-713
S. Xueguang, Y. Zhengliang
págs. 714-719
Estimation of uncertainty in pK~a values determined by potentiometric titration
E. Koort, K. Herodes
págs. 720-729
págs. 730-734
Identification of steel by X-ray fluorescence analysis with a pyroelectric X-ray generator
J. Kawai, H. Ida
págs. 735-738
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