Modeling of the post-breakdown IG-VG-VD characteristics of La2O3-based MOS transistors

• E. Miranda ^[1] ; J. Suñé ^[1] ; T. Kawanago ^[2] ; K. Kakushima ^[2] ; H. Iwai ^[2]
  1. [1] Universitat Autònoma de Barcelona

     Universitat Autònoma de Barcelona

     Barcelona, España

     
  2. [2] okyo Institute of Technology
• Localización: Proceedings of the 2013 Spanish Conference on Electron Devices / Héctor García (aut.), Helena Castán Lanaspa (aut.), 2013, ISBN 9781467346665
• Idioma: inglés
• Texto completo no disponible (Saber más ...)
• Resumen

  • A simple analytic model for the post-breakdown conduction characteristics in W/La 2 O 3 /p-type Si MOSFETs is reported. The model is based on the solution of the generalized diode equation and captures the behavior of the gate current (I G ) as a function of the gate (V G ) and drain (V D ) voltages including both positive and negative biases. The devices were subjected to ramped voltage stress so as to induce the dielectric breakdown close to or at the transistor drain region.