IEE Proceedings: Circuits, devices and systems

• 

  Año 2006, Vol. 153, Número 1

  • Editorial: Power semiconductors

    V. Benda

    págs. 1-2

    

  • Influence of Joule heating on current filaments induced by avalanche injection

    H. J. Schulze, U. Kellner Werdehausen, F. J. Niedernostheide, E. Falck

    págs. 3-10

    

  • Effects of different buffer structures on the avalanche behaviour of high voltage diodes under high reverse current conditions

    H. P. Felsl, J. Lutz, B. Heinze

    págs. 11-15

    

  • Avoidance of RF plasma extraction transit-time oscillations using 3-D EMC simulation: chances and limits

    M. Netzel, R. Siemieniec, P. Mourick

    págs. 16-22

    

  • On the control of electron-hole plasma in bipolar power devices

    A. Krysiak, R. Sittig

    págs. 23-28

    

  • Characteristics of a monolithic bidirectional switch (MBS) used in a diode function

    R. Sittig, S. Chmielus

    págs. 29-33

    

  • Review of series and parallel connection of IGBTs

    N. Y. A. Shammas, R. Withanage, D. Chamund

    págs. 34-39

    

  • Elucidation of the intrinsic loss arising from switch output capacitance Coss in ultra-high-speed low-loss power converters

    K. Adachi, C. M. Johnson, H. Ohashi, K. Takao

    págs. 40-45

    

  • Modelling CoolMOS transistors in SPICE

    K. Górecki, J. Zarebski

    págs. 46-52

    

  • Experimental validation of the `FLoating Islands¿ concept: 95 V breakdown voltage vertical FLIDiode

    F. Morancho, J. Margheritta, I. Deram, S. Alves, J. M. Reynès, B. Beydoun, K. Isoird

    págs. 53-60

    

  • Lateral power MOSFETs with drift trench electrodes and drain trench electrodes for a 42 V automotive system

    M. Kodama, T. Uesugi, M. Kanechika, H. Tadano

    págs. 61-66

    

  • Influence of layout design on the performance of LIGBT

    D. W. Green, M. Sweet, S. Hardikar, J. Nicholls, E. M. Sankara Narayanan

    págs. 67-72

    

  • Integrating power devices into silicon roadmaps

    P. Hower, S. Pendharkar, J. Smith

    págs. 73-78

    

  • Operating frequency and grounding issues regarding active junction isolation in the power integrated circuits

    P. M. Igic, T. K. H. Starke

    págs. 79-81

    

  • Non-uniform temperature and heat generation in thin-film SOI LDMOS with uniform drift doping

    S. Richter, J. Rebollo, I. Cortés, Salvador Hidalgo Villena, J. Roig, D. Flores, Jesús Roberto Urresti Ibáñez

    págs. 82-87