AbstracIn this paper, lattice-matched Pt/Au-In0.17Al0.83N/GaN high electron mobility transistors (HEMTs) were fabricated, and the degradation characteristics of the gate leakage current were investigated by drain-to-source voltage (VDS) step-stress measurements under the ON, semi-ON, and OFF stress conditions and at different temperatures, respectively. It is found that, (1) there exists a critical value of VDS, beyond which the gate leakage current begins to increase significantly; and (2) the degradation of gate leakage current has a positive temperature coefficient, indicating that high temperature can accelerate the degradation. A hot electron model is used to explain the experimental results, emphasizing that the hot electrons from the channel can induce additional negatively charged defects at the InAlN/GaN interface, which can increase the local electrical field and introduce a thinner surface barrier and finally enhance the vertical leakage current component, leading to the current degradation.
© 2001-2024 Fundación Dialnet · Todos los derechos reservados