Microelectronics reliability

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  Año 2016, Número 56

  • Editorial Board

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    págs. 1-1

    

  • Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs

    Shuang Fan, Bingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Dawei Bi, Chao Peng, Lei Song, Lihua Dai

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    págs. 1-9

    

  • Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators

    I. Messaris, T.A. Karatsori, N. Fasarakis, C.G. Theodorou, S. Nikolaidis, G. Ghibaudo, C.A. Dimitriadis

    • Resumen
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    págs. 10-16

    

  • Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer

    H. Lu, J.P. Xu, L. Liu, L.S. Wang, P.T. Lai, W.M. Tang

    • Resumen
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    págs. 17-21

    

  • Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks

    Felix Palumbo, Salvatore Lombardo, Moshe Eizenberg

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    págs. 22-28

    

  • Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors

    M. Estrada, M. Rivas, I. Garduño, F. Avila-Herrera, A. Cerdeira, M. Pavanello, I. Mejia, M.A. Quevedo-Lopez

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    págs. 29-33

    

  • Hot electrons induced degradation in lattice-matched InAlN/GaN high electron mobility transistors

    Jian Ren, Dawei Yan, Wenjie Mou, Yang Zhai, Guofeng Wang, Xiaofeng Gu

    • Resumen
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    págs. 34-36

    

  • Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs

    A. Sasikumar, A.R. Arehart, D.W. Cardwell, C.M. Jackson, W. Sun, Z. Zhang, S.A. Ringel

    • Resumen
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    págs. 37-44

    

  • Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN

    A.R. Arehart, A. Sasikumar, G.D. Via, B. Poling, E.R. Heller, S.A. Ringel

    • Resumen
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    págs. 45-48

    

  • Monitoring chip fatigue in an IGBT module based on grey relational analysis

    Shengqi Zhou, Luowei Zhou, Litao Yu, Sucheng Liu, Quanming Luo, Pengju Sun, Junke Wu

    • Resumen
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    págs. 49-52

    

  • Thermal characteristics and fabrication of silicon sub-mount based LED package

    Young-Pil Kim, Young-Shin Kim, Seok-Cheol Ko

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    págs. 53-60

    

  • Main degradation mechanism in AsTeGeSiN threshold switching devices

    Hyun-Sik Choi

    • Resumen
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    págs. 61-65

    

  • Berkovich nanoindentation on single SiGe epitaxial films

    Derming Lian, Pei Li Lin

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    págs. 66-72

    

  • On the shape formation of the droplet epitaxial quantum dots

    Ákos Nemcsics

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    págs. 73-77

    

  • In-situ X-ray μLaue diffraction study of copper through-silicon vias

    Dario Ferreira Sanchez, Shay Reboh, Monica Larissa Djomeni Weleguela, Jean-Sébastien Micha, Odile Robach, Thierry Mourier, Patrice Gergaud, Pierre Bleuet

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    págs. 78-84

    

  • Formation of Cu6Sn5 phase by cold homogenization in nanocrystalline Cu–Sn bilayers at room temperature

    H. Zaka, S.S. Shenouda, S.S. Fouad, M. Medhat, G.L. Katona, A. Csik, G.A. Langer, D.L. Beke

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    págs. 85-92

    

  • Evaluation of via density and low-k Young's modulus influence on mechanical performance of advanced node multi-level Back-End-Of-Line

    Luka Ključar, Mario González, Ingrid De Wolf, Kristof Croes, Jürgen Bömmels, Zsolt Tőkei

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    págs. 93-100

    

  • An optimal structural design to improve the reliability of Al2O3–DBC substrates under thermal cycling

    Ling Xu, Miaocao Wang, Yang Zhou, Zhengfang Qian, SHENG LIU

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    págs. 101-108

    

  • The effect of bending loading conditions on the reliability of inkjet printed and evaporated silver metallization on polymer substrates

    O. Glushko, Megan J. Cordill, A. Klug, E.J.W. List-Kratochvil

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    págs. 109-113

    

  • Corrosion testing of anisotropic conductive adhesive interconnections on FR4, liquid crystal polymer and polyimide substrates

    Anniina Parviainen, Kati Kokko, Laura Frisk

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    págs. 114-120

    

  • Failure of electrical vias manufactured in thick-film technology when loaded with short high current pulses

    D. Ortolino, J. Kita, K. Beart, R. Wurm, S. Kleinewig, A. Pletsch, R. Moos

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    págs. 121-128

    

  • Mechanical and thermal characterization of a novel nanocomposite thermal interface material for electronic packaging

    Shuangxi Sun, Si Chen, Xin Luo, Yifeng Fu, Lilei Ye, Johan Liu

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    págs. 129-135

    

  • Experimental determination of fatigue behavior of lead free solder joints in microelectronic packaging subjected to isothermal aging

    Muhannad Mustafa, Jeffrey C. Suhling, Pradeep Lall

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    págs. 136-147

    

  • Study on fatigue life and electrical property of COG assembly under thermal–electric–mechanical coupled loads

    Hong Gao, Wenguo Zhang, Zhe Zhang, Lilan Gao, Gang Chen

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    págs. 148-154

    

  • Evaluation of the corrosion performance of Cu–Al intermetallic compounds and the effect of Pd addition

    Adeline B.Y. Lim, Wei Jian Neo, Oranna Yauw, Bob Chylak, Chee Lip Gan, Zhong Chen

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    págs. 155-161

    

  • Problem with no-clean flux spattering on in-circuit testing pads diagnosed by EDS analysis

    K. Dušek, D. Bušek

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    págs. 162-169

    

  • Lattice Boltzmann method study of bga bump arrangements on void formation

    Aizat Abas, M.H.H. Ishak, M.Z. Abdullah, F. Che Ani, Soon Fuat Khor

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    págs. 170-181

    

  • Thermal reliability prediction and analysis for high-density electronic systems based on the Markov process

    Yi Wan, Hailong Huang, Diganta Das, Michael Pecht

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    págs. 182-188

    

  • Resilient routing implementation in 2D mesh NoC

    Rimpy Bishnoi, Vijay Laxmi, Manoj Singh Gaur, Mark Zwolinski

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    págs. 189-201

    

  • Low latency radiation tolerant self-repair reconfigurable SRAM architecture

    Nikolaos Eftaxiopoulos, Nicholas Axelos, Kiamal Pekmestzi

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    págs. 202-211