The variation of the leakage current characteristics of W/Ta2O5/W MIM capacitors with the thickness of the bottom W electrode

• Autores: D.Q. Yu, W.S. Lau, Hei Wong, Xuan Feng, Shurong Dong, K.L. Pey
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 61, 2016, págs. 95-98
• Idioma: inglés
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  • Abstract In this paper, we will report that the leakage current characteristics can be a function of the bottom electrode. The variation of the bottom tungsten electrode thickness can affect the leakage current characteristics of W/Ta2O5/W MIM capacitors mainly through two mechanisms. The first mechanism is that the Ta2O5 CVD process can be influenced by the W bottom electrode thickness. Experimentally it was observed that the thickness of the Ta2O5 film deposited by CVD is noticeably different for samples with different bottom W electrodes with different thicknesses. The second mechanism is that the surface roughness of the bottom W electrode increases with increasing thickness, resulting in a smaller effective Schottky barrier height. A smaller effective Schottky barrier height will lead to larger leakage current.