Microelectronics reliability

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  Año 2016, Número 61

  • Editorial Board

    • Texto completo

    págs. 1-1

    

  • Editorial

    Asen Asenov, Ulf Schichtmann, Cher Ming Tan, Hei Wong, Xing Zhou

    • Texto completo

    págs. 2-2

    

  • Stress in three-dimensionally integrated sensor systems

    Lado Filipovic, Siegfried Selberherr

    • Resumen
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    págs. 3-10

    

  • MPSoC application resilience by hardware-assisted communication virtualization

    S. Rösch, H. Rauchfuss, S. Wallentowitz, T. Wild, A. Herkersdorf

    • Resumen
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    págs. 11-16

    

  • A step-accurate model for the trapping and release of charge carriers suitable for the transient simulation of analog circuits

    Husni Habal, Helmut Graeb

    • Resumen
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    págs. 17-23

    

  • Influence of channel length and high-K oxide thickness on subthreshold analog/RF performance of graded channel and gate stack DG-MOSFETs

    Sanjit Kumar Swain, Arka Dutta, Sarosij Adak, Sudhansu Kumar Pati, Chandan Kumar Sarkar

    • Resumen
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    págs. 24-29

    

  • FinFET-based product performance: Modeling and evaluation of standard cells in FinFET technologies

    Shushanik Karapetyan, Veit Kleeberger, Ulf Schlichtmann

    • Resumen
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    págs. 30-34

    

  • Electrical properties of carbon nanotube via interconnects for 30 nm linewidth and beyond

    Anshul A. Vyas, Changjian Zhou, Patrick Wilhite, Phillip Wang, Cary Y. Yang

    • Resumen
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    págs. 35-42

    

  • A cross layer approach for efficient thermal management in 3D stacked SoCs

    Matthias Jung, Christian Weis, Norbert Wehn

    • Resumen
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    págs. 43-47

    

  • Numerical study of microbump failure in 3D microelectronic structures

    Y.-L. Shen, G.C. Flores, J. Guthrie

    • Resumen
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    págs. 48-55

    

  • Non-destructive degradation study of copper wire bond for its temperature cycling reliability evaluation

    Marvin Chan, Cher Ming Tan, Kheng Chooi Lee, Chuan Seng Tan

    • Resumen
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    págs. 56-63

    

  • Reliability study of 3D IC packaging based on through-silicon interposer (TSI) and silicon-less interconnection technology (SLIT) using finite element analysis

    Fa Xing Che, Xiaowu Zhang, Jong-Kai Lin

    • Resumen
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    págs. 64-70

    

  • Compliance current dominates evolution of NiSi2 defect size in Ni/dielectric/Si RRAM devices

    Sen Mei, Michel Bosman, Raghavan Nagarajan, Xing Wu, Kin Leong Pey

    • Resumen
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    págs. 71-77

    

  • Effects of thermal annealing on the charge localization characteristics of HfO2/Au/HfO2 stack

    Xuan Feng, Shurong Dong, Hei Wong, Danqun Yu, K.L. Pey, K. Shubhakar, W.S. Lau

    • Resumen
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    págs. 78-81

    

  • Comparison of electrical characteristics between AlGaN/GaN and lattice-matched InAlN/GaN heterostructure Schottky barrier diodes

    Jian Ren, Dawei Yan, Yang Zhai, Wenjie Mou, Xiaofeng Gu

    • Resumen
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    págs. 82-86

    

  • Copper induced synthesis of graphene using amorphous carbon

    Udit Narula, Cher Ming Tan, Chao Sung Lai

    • Resumen
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    págs. 87-90

    

  • Reliability enhancement of zinc oxide varistors using sputtered silver electrodes

    Hao Jin, Xiao Xu, Yebo Tao, Bin Feng, Demiao Wang

    • Resumen
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    págs. 91-94

    

  • The variation of the leakage current characteristics of W/Ta2O5/W MIM capacitors with the thickness of the bottom W electrode

    D.Q. Yu, W.S. Lau, Hei Wong, Xuan Feng, Shurong Dong, K.L. Pey

    • Resumen
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    págs. 95-98

    

  • Impact of temperature on linearity and harmonic distortion characteristics of underlapped FinFET

    Arka Dutta, Kalyan Koley, Samar K. Saha, Chandan K. Sarkar

    • Resumen
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    págs. 99-105

    

  • Very small snapback silicon-controlled rectifier for electrostatic discharge protection in 28 nm processing

    Weihuai Wang, Hao Jin, Wei Guo, Shurong Dong, Wei Liang, J.J. Liou, Yan Han

    • Resumen
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    págs. 106-110

    

  • Comparative study of reliability degradation behaviors of LDMOS and LDMOS-SCR ESD protection devices

    Zhihui Yu, Hao Jin, Shurong Dong, Hei Wong, Jie Zeng, Weihuai Wang

    • Resumen
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    págs. 111-114

    

  • Design and optimization of LDMOS-SCR devices with improved ESD protection performance

    Hailian Liang, Huafeng Cao, Xiaofeng Gu, Zixiang Guo

    • Resumen
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    págs. 115-119

    

  • Investigation on LDMOS-SCR with high holding current for high voltage ESD protection

    Hailian Liang, Xiuwen Bi, Xiaofeng Gu, Huafeng Cao, Yun Zhang

    • Resumen
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    págs. 120-124

    

  • 300-V class power n-channel LDMOS transistor implemented in 0.18-μm silicon-on-insulator (SOI) technology

    Shuai Zhang, Hsiao-Chin Tuan, Xiao-Jing Wu, Lei Shi, Jian Wu

    • Resumen
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    págs. 125-128

    

  • A review on the humidity reliability of high power white light LEDs

    Preetpal Singh, Cher Ming Tan

    • Resumen
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    págs. 129-139

    

  • Simulation and evaluation of the peak temperature in LED light bulb heatsink

    Lixia Sun, Jianxin Zhu, H. Wong

    • Resumen
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    págs. 140-144

    

  • Early degradation of high power packaged LEDs under humid conditions and its recovery — Myth of reliability rejuvenation

    Preetpal Singh, Cher Ming Tan, Liann-Be Chang

    • Resumen
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    págs. 145-153