Long-term degradation of InGaN-based laser diodes: Role of defects

• Autores: D. Monti, M. Meneghini, C. De Santi, G. Meneghesso, E. Zanoni, A. Bojarska, P. Perlin
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 76-77, 2017, págs. 584-587
• Idioma: inglés
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• Resumen

  • Abstract The aim of this paper is to give an extensive presentation of the defect-related degradation of InGaN-based laser diodes (LDs) submitted to constant current stress, at room temperature. The analysis is based on combined electrical-optical characterization, the capacitance-temperature analysis, and deep-level transient spectroscopy (DLTS). The results show that stress induces a significant increase of the threshold current and the appearance of two defects, possibly related to point defects arranged along lines.