Resumen de Modeling of the post-breakdown IG-VG-VD characteristics of La2O3-based MOS transistors
E. Miranda, J. Suñé, T. Kawanago, K. Kakushima, H. Iwai
A simple analytic model for the post-breakdown conduction characteristics in W/La 2 O 3 /p-type Si MOSFETs is reported. The model is based on the solution of the generalized diode equation and captures the behavior of the gate current (I G ) as a function of the gate (V G ) and drain (V D ) voltages including both positive and negative biases. The devices were subjected to ramped voltage stress so as to induce the dielectric breakdown close to or at the transistor drain region.
