Microelectronics reliability

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  Año 2008, Vol. 48, Número 3

  • Assessment of temperature and voltage accelerating factors for 2.3¿3.2 nm SiO2 thin oxides stressed to hard breakdown.

    D. Pic, D. Goguenheim, J.L. Ogier

    págs. 335-341

    

  • A new model of subthreshold swing for sub-100 nm MOSFETs.

    L.-A. Yang, C.-L. Yu, Y. Hao

    págs. 342-347

    

  • A junction characterization for microelectronic devices quality and reliability.

    W. Tazibt, P. Mialhe, J.P. Charles, M.A. Belkhir

    págs. 348-353

    

  • Impact of single pMOSFET dielectric degradation on NAND circuit performance.

    D. Estrada, M.L. Ogas, R.G. Southwick III, P.M. Price, R.J. Baker, W.B. Knowlton

    págs. 354-363

    

  • Suppression of Ge¿O and Ge¿N bonding at Ge¿HfO2 and Ge¿TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices.

    S. Lee, J.P. Long, G. Lucovsky, J.L. Whitten, H. Seo, J. Lüning

    págs. 364-369

    

  • Conduction mechanisms of silicon oxide/titanium oxide MOS stack structures.

    J.C. Tinoco, M. Estrada, Benjamín Iñiguez Nicolau, A. Cerdeira

    págs. 370-381

    

  • Extraction of interface states at emitter¿base heterojunctions in AlGaAs/GaAs heterostructure bipolar transistors using sub-bandgap photonic excitation.

    S.W. Kim, K.S. Roh, S.H. Seo, K.Y. Kim, G.C. Kang, S. Lee, C.M. Choi, S.R. Park, J. H. Park, K.C. Chun, K.J. Song, D.H. Kim, D.M. Kim

    págs. 382-388

    

  • Characteristics of ZnO thin films prepared by radio frequency magnetron sputtering.

    P.-F. Yang, H.C. Wen, S.-R. Jian, Y.-S. Lai, S. Wu, R.-S. Chen

    págs. 389-394

    

  • Characterization of semiconductor interfaces using a modified mixed mode bending apparatus.

    J. Thijsse, O. van der Sluis, J.A.W. van Dommelen, W.D. van Driel, M.G.D. Geers

    págs. 389-394

    

  • dc-Conduction mechanism in lanthanum¿manganese oxide films grown on p-Si substrate.

    A.A. Dakhel

    págs. 395-400

    

  • Reliability evaluation of BOAC and normal pad stacked-chip packaging using low-K wafers

    K.-M. Chen, K.H. Tang, J.S. Liu

    págs. 408-415

    

  • Growth behavior of Cu/Al intermetallic compounds and cracks in copper ball bonds during isothermal aging.

    C.J. Hang, C.Q. Wang, M. Mayer, Y.H. Tian, Y. Zhou, H.H. Wang

    págs. 416-424

    

  • Experimental verification of models for underfill flow driven by capillary forces in flip-chip packaging.

    J.W. Wan, W. J. Zhang, D.J. Bergstrom

    págs. 425-430

    

  • Effect of process-induced voids on isothermal fatigue resistance of CSP lead-free solder joints.

    G. Yu, T. Shibutani, D.-S. Kim, Y. Kobayashi, J. Yang, M. Shiratori

    págs. 431-437

    

  • Quantification of creep strain in small lead-free solder joints with the in situ micro electronic-resistance measurement.

    L. Jiang, K. Yang, J. Zhou, K. Xiang, Whye-Teong Ang

    págs. 438-444

    

  • Thermal transient characteristics of die attach in high power LED PKG.

    H.-H. Kim, S.-H. Choi, S.-H. Shin, Y.-K. Lee, S.-M. Choi, S. Yi

    págs. 445-454

    

  • Effect of primary creep and plasticity in the modeling of thermal fatigue of SnPb and SnAgCu solder joints.

    D.R. Shirley, H.R. Ghorbani, J.K. Spelt

    págs. 455-470

    

  • A dual burn-in policy for defect-tolerant memory products using the number of repairs as a quality indicator.

    S.-H. Tong, S.-H. Yum

    págs. 471-480

    

  • Reliability functions estimated from commonly used yield models.

    K.O. Kim, H.-S. Oh

    págs. 481-489