Microelectronics reliability

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  Año 2009, Vol. 49, Número 4

  • Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal.

    Y.K. Fukai, K. Kurishima, N. Kashio, M. Ida, S. Yamahata, T. Enoki

    págs. 357-364

    

  • Study of gate dielectric permittivity variation with different equivalent oxide thickness on channel engineered deep sub-micrometer n-MOSFET device for mixed signal applications.

    A. Srivastava, P. Sarkar, C.K. Sarkar

    págs. 365-370

    

  • ng vertical dielectric layers to improve the operation performance of flash memory devices.

    C.-H. Ho, K.-S. Chang-Liao, C.-Y. Lu, C.-C. Lu, T.-K. Wang

    págs. 371-376

    

  • Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface charges.

    F. Djeffal, Z. Ghoggali, Z. Dibi, N. Lakhdar

    págs. 377-381

    

  • Structure optimization of multi-finger power SiGe HBTs for thermal stability improvement.

    D. Jin, W. Zhang, H. Xie, L. Chen, P. Shen, N. Hu

    págs. 382-386

    

  • Subthreshold parameters of radio-frequency multi-finger nanometer MOS transistors.

    S.-L. Siu, H. Wong, W.-S. Tam, K. Kakusima, H. Iwai

    págs. 387-391

    

  • Study on the performance of sub 100 nm LACLATI MOSFETs for digital application.

    P. Sarkar, A. Mallik, C.K. Sarkar

    págs. 392-396

    

  • Mapping the failure envelope of board-level solder joints.

    L.B. Tan, X. Zhang, C.T. Lim, V.B.C. Tan

    págs. 397-409

    

  • Soft error recovery in simplex and triplex memory systems.

    J. Kontoleon

    págs. 410-423

    

  • Electrothermal analysis of the self-excited push�pull DC�DC converter.

    K. Górecki, J. Zarebski

    págs. 424-430

    

  • Non-linear average electrothermal models of buck and boost converters for SPICE.

    K. Górecki

    págs. 431-437

    

  • A CORDIC-based digital protective relay and its architecture.

    J.K. Park, J.T. Kim, M.-C. Shin

    págs. 438-447

    

  • CDMA bus-based on-chip interconnect infrastructure.

    T. Nikolic, M. Stojcev, G. Djordjevic

    págs. 448-459

    

  • Towards the use of the conformal-evaporated-film-by-rotation technique in fabricating microelectronic circuits and microsystems.

    R.J. Martín-Palma, C.G. Pantano, A. Lakhtakia

    págs. 460-462

    

  • Characteristics of metal-oxide-semiconductor (MOS) device with Er metal gate on SiO2 film.

    C.-J. Choi, H.-Y. Yang, H.-B. Hong, J.-G. Kim, S.-Y. Chang, J. Lee

    págs. 463-465