Microelectronics reliability

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  Año 2009, Vol. 49, Número 6

  • IMAPS�CPMT Poland 2008 � Guest Editorial.

    A. Dziedzic

    págs. 567-568

    

  • Risk of whiskers formation on the surface of commercially available tin-rich alloys under thermal shocks.

    A. Skawarek, K. Witek, J. Ratajczak

    págs. 569-572

    

  • Board level investigation of BGA solder joint deformation strength.

    B. Sinkovics, O. Krammer

    págs. 573-578

    

  • A new photoimageable platinum conductor.

    S. Achmatowicz, K. Kielbasinski, E. Zwierkowska, I. Wyzkiewicz, V. Baltrusaitis, M. Jakubowska

    págs. 579-584

    

  • Three-dimensional structuration of zero-shrinkage LTCC ceramics for microfluidic applications.

    K. Malecha, L.J. Golonka

    págs. 585-591

    

  • Processing procedures for the realization of fine structured channel arrays and bridging elements by LTCC-Technology.

    W. Smetana, B. Balluch, G. Stangl, S. Luftl, S. Seidler

    págs. 592-599

    

  • Fabrication and electrical properties of laser-shaped thick-film and LTCC microresistors.

    Damian Nowak, E. Mis, A. Dziedzic, J. Kita

    págs. 600-606

    

  • Microvaristors in thick-film and LTCC circuits.

    E. Mis, A. Dziedzic, W. Mielcarek

    págs. 607-613

    

  • Stability of solid electrolyte based thick-film CO2 sensors.

    C. Belda, M. Fritsch, C. Feller, D. Westphal, G. Jung

    págs. 614-620

    

  • Miniaturised multi-MEMS sensor development.

    M. Hautefeuille, B. O'Flynn, F. Peters, C. O'Mahony

    págs. 621-626

    

  • Die-attachment solutions for SiC power devices.

    R. Kisiel, Z. Szczepanski

    págs. 627-630

    

  • Reliability of lead-free solder in power module with stochastic uncertainty.

    A. Micol, C. Martin, O. Dalverny, M. Mermet-Guyennet, M. Karama

    págs. 631-641

    

  • Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability.

    A. Bansal, Rajesh A. Rao, J.-J. Kim, S. Zafar, J.H. Stathis, C.-T. Chuang

    págs. 642-649

    

  • Low-capacitance ESD protection design for high-speed I/O interfaces in a 130-nm CMOS process.

    Y.-W. Hsiao, M.-D. Ker

    págs. 650-659

    

  • MESFET DC model parameter extraction using Quantum Particle Swarm Optimization.

    S.L. Sabat, L. dos Santos Coelho, A. Abraham

    págs. 660-666

    

  • Tin whisker growth on bulk Sn�Pb eutectic doping with Nd.

    M. Liu, A.-P. Xian

    págs. 667-672