IEICE transactions on electronics

• 

  Año 2000, Vol. 83, Número 8

  • Modeling and Simulation of Tunneling Current in MOS Devices Including Quantum Mechanical Effects

    A. Hamad, H. Vaidya, A. Ghetti, J. Bude, P. Silverman

    págs. 1175-1182

    

  • Homogeneous Transport in Silicon Dioxide Using the Spherical-Harmonics Expansion of the BTE

    L. Scozzoli, S. Reggiani, M. Rudan

    págs. 1183-1188

    

  • Simulation of Direct Tunneling through Stacked Gate Dielectrics by a Fully Integrated 1D-Schrodinger-Poisson

    A. Wettstein, A. Schenk, W. Fichtner

    págs. 1189-1193

    

  • Comparison between Device Simulators for Gate Current Calculation in Ultra-Thin Gate Oxide n-MOSFETs

    P. Hesto, E. Cassan, S. Galdin, P. Dollfus

    págs. 1194-1202

    

  • Increasing Importance of Electronic Thermal Noise in Sub-0.1 mum Si-MOSFETs

    N. Sano

    págs. 1203-1211

    

  • Monte Carlo Simulation of Sub-0.1 mum Devices with Schottky Contact Model

    K. Matsuzawa, K. Uchida, A. Nishiyama

    págs. 1212-1217

    

  • A Monte-Carlo Method to Analyze the Small Signal Response of the Semiconductor Carriers

    M. Nedjalkov, H. Kosina, S. Selberherr

    págs. 1218-1223

    

  • RF Analysis Methodology for Si and SiGe FETs Based on Transient Monte Carlo Simulation

    J. R. Barker, S. Roy, S. Kaya, A. Asenov

    págs. 1224-1227

    

  • Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile

    C. Jungemann, S. Keith, B. Meinerzhagen

    págs. 1228-1234

    

  • Simulation of Multi-Band Quantum Transport Reflecting Realistic Band Structure

    T. Miyoshi, M. Ogawa, T. Sugano, R. Tominaga

    págs. 1235-1241

    

  • Effect of the Tunneling Rates on the Conductance Characteristics of Single-Electron Transistors

    A. Scholze, A. Schenk, W. Fichtner

    págs. 1242-1246

    

  • Molecular Dynamics Calculation Studies of Interstitial-Si Diffusion and Arsenic Ion Implantation Damage

    M. Hane, T. Ikezawa, A. Furukawa

    págs. 1247-1252

    

  • Atomic Scale Simulation of Extended Defects: Monte Carlo Approach

    J. Lee, T. Won

    págs. 1253-1258

    

  • A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation

    J. Lorenz, H. Ryssel, S. Selberherr, A. Burenkov, K. Tietzel, A. Hossinger

    págs. 1259-1266

    

  • 3-Dimensional Process Simulation of Thermal Annealing of Low Dose Implanted Dopants in Silicon

    E. Lampin, V. Senez, J. Herbaux, T. Hoffmann

    págs. 1267-1274

    

  • Application of Technology CAD in Process Development for High Performance Logic and System-on-Chip in IC Foundry

    S. Y. Wu, J. Y. C. Sun, Y. F. Lin, D. S. Kuo, H. T. Lin, A. Yen, B. K. Liew, C. C. Wang, C. H. Diaz

    págs. 1275-1280

    

  • Advanced Process/Device Modeling and Its Impact on the CMOS Design Solution

    S. Kumashiro

    págs. 1281-1287

    

  • Systematic Yield Simulation Methodology Applied to Fully-Depleted SOI MOSFET Process

    K. Nishi, N. Miura, H. Hayashi, K. Fukuda

    págs. 1288-1294

    

  • Delay Library Generation with High Efficiency and Accuracy on the Basis of RSM

    H. Baba, S. Isomura, H. Masuda, H. Sato, Y. Ito, H. Kunitomo

    págs. 1295-1302

    

  • Practical Inverse Modeling with SIESTA

    R. Strasser, S. Selberherr

    págs. 1303-1310

    

  • Interconnect Modeling in Deep-Submicron Design

    K. H. Lee, W. Y. Jung, S. Y. Oh, J. T. Kong

    págs. 1311-1316

    

  • Circuit-Level Electrothermal Simulation of Electrostatic Discharge in Integrated Circuits

    N. Kotani, T. Nishimura, K. I. Sonoda, M. Tanizawa, K. Ishikawa

    págs. 1317-1323

    

  • A BSIM3v3 and DFIM Based Ferroelectric Field Effect Transistor Model

    T. Haneder, M. Ullmann, H. Goebel, H. Hoenigschmid

    págs. 1324-1330

    

  • New Developments and Old Problems in Grid Generation and Adaptation for TCAD Applications

    W. Fichtner, J. Krause, B. Schmithusen, L. Villablanca

    págs. 1331-1337

    

  • Control and Improvement of Surface Triangulation for Three-Dimensional Process Simulation

    E. Bar, J. Lorenz

    págs. 1338-1342

    

  • A Three-Dimensional Mesh Generation Method with Precedent Triangulation of Boundary

    K. I. Tanaka, A. Notsu, A. Furukawa

    págs. 1343-1348

    

  • An Advancing Front Meshing Algorithm Using NURBS for Semiconductor Process Simulation

    O. Kwon, T. Won, S. Yoon, J. Lee

    págs. 1349-1355