Microelectronics reliability

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  Año 2008, Vol. 48, Número 4

  • A study of the linearity between Ion and log Ioff of modern MOS transistors and its application to stress engineering.

    W.S. Lau, P. Yang, C.W. Eng, V. Ho, C.H. Loh, S.Y. Siah, D. Vigar, L. Chan

    págs. 497-503

    

  • A unification of interface-state generation and hole-injection for hot-carrier-injection stress in low and high-voltage NMOSFET.

    M. Z. Dai, S.I. Kim, Andrew Yap, S. Liu, A. Cheng, L. Yi

    págs. 504-507

    

  • Investigation of hot carrier degradation in asymmetric nDeMOS transistors.

    Q. Yang, L. Sun, Andrew Yap

    págs. 508-513

    

  • Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks.

    E. Atanassova, A. Paskaleva, N. Novkovski

    págs. 514-525

    

  • Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric.

    C. X. Li, X. Zou, P.T. Lai, J.P. Xu, C.L. Chan

    págs. 526-530

    

  • Degradation of n-channel a-Si:H/nc-Si:H bilayer thin-film transistors under DC electrical stress.

    N. Arpatzanis, A.T. Hatzopoulos, D.H. Tassis, C.A. Dimitriadis, F. Templier, M. Oudwan, G. Kamarinos

    págs. 531-536

    

  • Numerical and experimental analysis of EMI effects on circuits with MESFET devices.

    H.-C. Tsai

    págs. 537-546

    

  • Effect of doping concentration on avalanche multiplication and excess noise factor in submicron APD.

    A.H. You, P.L. Cheang

    págs. 547-554

    

  • Leaky modes of optical waveguides with varied refractive index for microchip optical interconnect applications ¿ Asymptotic solutions.

    J. Zhu, Z. Chen, S. Tang

    págs. 555-562

    

  • Thermal impedance measurements under non-equilibrium conditions. How to extend its validity.

    F.N. Masana

    págs. 563-568

    

  • Effects of length scaling on electromigration in dual-damascene copper interconnects.

    M.H. Lin, M.T. Lin, T. Wang

    págs. 569-577

    

  • Temperature-dependent stress-induced voiding in dual-damascene Cu interconnects.

    Z. Wu, Y. Yang, C. Chai, Y. Li, J. Wang, J. Liu, B. Liu

    págs. 578-583

    

  • Deposition of aerosol (¿hygroscopic dust¿) on electronics ¿ Mechanism and risk.

    M. Tencer

    págs. 584-593

    

  • Theoretical and numerical analysis of the effect of constant velocity on thermosonic bond strength.

    J. He, Y. Guo, Z. Lin

    págs. 594-601

    

  • Board level solder joint reliability analysis of a fine pitch Cu post type wafer level package (WLP).

    X. Zhang, V. Kripesh, T.C. Chai, T.C. Tan, D. Pinjala

    págs. 602-610

    

  • The influence of solder volume and pad area on Sn¿3.8Ag¿0.7Cu and Ni UBM reaction in reflow soldering and isothermal aging.

    C.K. Wong, J.H.L. Pang, J.W. Tew, B.K. Lok, H.J. Lu, F.L. Ng, Y.F. Sun

    págs. 611-621

    

  • Thermal fatigue endurance of collapsible 95.5Sn4Ag0.5Cu spheres in LTCC/PWB assemblies.

    O. Nousiainen, L. Lehtiniemi, T. Kangasvieri, R. Rautioaho, J. Vähäkangas

    págs. 622-630

    

  • Characteristics of Sn8Zn3Bi solder joints and crack resistance with various PCB and lead coatings.

    Y.W. Lee, K.J. Lee, Y.N. Zhou, J.P. Jung

    págs. 631-637

    

  • Combining vibration test with finite element analysis for the fatigue life estimation of PBGA components.

    Y.S. Chen, C. S. Wang, Y.J. Jang

    págs. 638-644

    

  • Filler size and content effects on the composite properties of anisotropic conductive films (ACFs) and reliability of flip chip assembly using ACFs.

    J.S. Hwang

    págs. 645-651

    

  • Effect of surface finish material on printed circuit board for electrochemical migration.

    B.-I. Noh, J.-B. Lee, S.-B. Jung

    págs. 652-656