Microelectronics reliability

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  Año 2007, Vol. 47, Número 8

  • Field returns, a source of natural failure mechanisms.

    W.J. Roesch, S. Brockett

    págs. 1156-1165

    

  • Defining the safe operating area for HBTs with an InGaP emitter across temperature and current density.

    C.S. Whitman

    págs. 1166-1174

    

  • Determination of transistor infant failure probability in InGaP/GaAs heterojunction bipolar technology.

    K.W. Alt, R.E. Yeats, C.P. Hutchinson, D.K. Kuhn, T.S. Low, M. Iwamoto, M.E. Adamski, R.L. Shimon, T.E. Shirley, M. Bonse, F.G. Kellert, D.C. D'Avanzo

    págs. 1175-1179

    

  • Reliability and performance of a true enhancement mode HIGFET for wireless applications.

    C. Gaw, T. Arnold, E. Glass, R. Martin

    págs. 1180-1187

    

  • Effect of oval defects in GaAs on the reliability of SiNx metal¿insulator¿metal capacitors.

    P.J. van der Wel, J.R. De Beer, R.J.M. Van Boxtel, Y.Y. Hsieh, Y. C. Wang

    págs. 1188-1194

    

  • Characterisation and passivation of interface defects in (1 0 0)-Si/SiO2/HfO2/TiN gate stacks.

    P.K. Hurley, K. Cherkaoui, S. McDonell, G. Hughes, A.W. Groenland

    págs. 1195-1201

    

  • Correlating gate sinking and electrical performance of pseudomorphic high electron mobility transistors.

    R.A. Berechman, B. Revzin, Y. Shapira

    págs. 1202-1207

    

  • Very wide current-regime operation of an InP/InGaAs tunneling emitter bipolar transistor (TEBT).

    S.-Y. Cheng

    págs. 1208-1212

    

  • First-principles study of the effects of oxygen vacancy on hole tunneling current.

    L.F. Mao

    págs. 1213-1217

    

  • Low frequency noise and technology induced mechanical stress in MOSFETs.

    P. Fantini, G. Ferrrari

    págs. 1218-1221

    

  • Comparison between BSIM4.X and HSPICE flicker noise models in NMOS and PMOS transistors in all operating regions.

    T. Noulis, S. Siskos, G. Sarrabayrouse

    págs. 1222-1227

    

  • Improved low frequency noise characteristics of sub-micron MOSFETs with TaSiN/TiN gate on ALD HfO2 dielectric.

    S.P. Devireddy, B. Min, Z. Çelik-Butler, H.-H. Tseng, P.J. Tobin, A. Zlotnicka

    págs. 1228-1232

    

  • Influence of thermal contact resistance on thermal impedance of microelectronic structures.

    B. Vermeersch, G. de Mey

    págs. 1233-1238

    

  • Response spectra analysis for undamped structural systems subjected to half-sine impact acceleration pulses.

    T.-Y. Tsai, C.-L. Yeh, Y.-S. Lai, R.-S. Chen

    págs. 1239-1245

    

  • Chip-on-Board (CoB) technology for low temperature environments. Part I: Wire profile modeling in unencapsulated chips.

    K.K. Jinka, S. Ganesan, Aritra Dasgupta, S. Ling, A. Shapiro, D. Schatzel

    págs. 1246-1250

    

  • Cohesive zone modeling for structural integrity analysis of IC interconnects.

    B.A.E. Van Hal, R.H.J. Peerlings, M.G.D. Geers, O. van der Sluis

    págs. 1251-1261

    

  • Correlation between localized strain and damage in shear-loaded Pb-free solders.

    M. A. Martin, J.G.A. Theeven, W.P. Vellinga, M.G.D. Geers

    págs. 1262-1272

    

  • Electromigration of Sn¿37Pb and Sn¿3Ag¿1.5Cu/Sn¿3Ag¿0.5Cu composite flip¿chip solder bumps with Ti/Ni(V)/Cu under bump metallurgy.

    Y.-S. Lai, K.-M. Chen, C.-L. Kao, C.-W. Lee, Y.-T. Chiu

    págs. 1273-1279

    

  • Studies on solder bump electromigration in Cu/Sn¿3Ag¿0.5Cu/Cu system.

    Keiji Yamanaka, Y. Tsukada, K. Suganuma

    págs. 1280-1287

    

  • A symbolic approach to design centering of analog circuits.

    F. Grasso, S. Manetti, M.C. Piccirilli

    págs. 1288-1295

    

  • Switching times variation of power MOSFET devices after electrical stress.

    R. Habchi, C. Salame, P. Mialhe, A. Khoury

    págs. 1296-1299

    

  • On the failure path in shear-tested solder joints.

    W.H. Moy, Y.-L. Shen

    págs. 1300-1305