Microelectronics reliability

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  Año 2007, Vol. 47, Número 9-11

  • Field failure mechanism and improvement of EOS failure of integrated IGBT inverter modules.

    Jin Su Jeong, S.-H. Hong, S.-D. Park

    págs. 1795-1799

    

  • A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D physically based device simulation.

    A. Benmansour, S. Azzopardi, J.C. Martin, E. Woirgard

    págs. 1800-1805

    

  • Science-based MEMS reliability methodology.

    D.M. Tanner, T.B. Parson, A.D. Corwin, J.A. Walraven, J.W. Wittwer, B.L. Boyce, S.R. Winzer

    págs. 1806-1811

    

  • Structure dependent charging process in RF MEMS capacitive switches.

    E. Papandreou, M. Lamhamdi, C.M. Skoulikidou, P. Pons, G. Papaioannou, R. Plana

    págs. 1812-1817

    

  • Electrostatic discharge failure analysis of capacitive RF MEMS switches.

    J. Ruan, N. Nolhier, Marise Bafleur, L. Bary, F. Coccetti, T. Lisec, R. Plana

    págs. 1818-1822

    

  • Mechanical reliability challenges for MEMS packages: Capping.

    W.D. van Driel, D.G. Yang, C.A. Yuan, M. Van Kleef, G.Q. Zhang

    págs. 1823-1826

    

  • Effects of atmospheric neutrons on devices, at sea level and in avionics embedded systems.

    J.L. Leray

    págs. 1827-1835

    

  • Configuration errors analysis in SRAM-based FPGAs: Software tool and practical results.

    V. Maingot, J.B. Ferron, R. Leveugle, V. Pouget, A. Douin

    págs. 1836-1840

    

  • Influence of polysilicon film thickness on radiation response of advanced excimer laser annealed polycrystalline silicon thin film transistors.

    V. Davidovic, D.N. Kouvatsos, N. Stojadinovic, A.T. Voutsas

    págs. 1841-1845