Microelectronics reliability

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  Año 2007, Vol. 47, Número 9-11

  • Degradation mechanism understanding of NLDEMOS SOI in RF applications.

    D. Lachenal, A. Bravaix, F Monsieur, Y. Rey-Tauriac

    págs. 1634-1638

    

  • Characterization and analysis of trap-related effects in AlGaN¿GaN HEMTs.

    M. Faqir, G. Verzellesi, F. Fantini, F. Danesin, F. Rampazzo, G. Meneghesso, E. Zanoni, A. Cavallini, A. Castaldini, N. Labat, A. Touboul, C. Dua

    págs. 1639-1642

    

  • A study of metamorphic HEMT technological improvements: Impact on parasitic effect electrical models.

    O. Pajona, C. Aupetit-Berthelemot, J.M. Dumas

    págs. 1643-1648

    

  • Thermal analysis of InGaN/GaN (GaN substrate) laser diodes using transient interferometric mapping.

    S. Bychikhin, T. Swietlik, T. Suski, S. Porowski, P. Perlin, D. Pogany

    págs. 1649-1652

    

  • Preliminary reliability assessment and failure physical analysis on AlGaN/GaN HEMTs COTS.

    P. Burgaud, L. Constancias, Gilberto Martel Rodríguez, C. Savina, D. Mesnager

    págs. 1653-1657

    

  • Reliability assessment for solders with a stress buffer layer using ball shear strength test and board-level finite element analysis.

    M.-C. Yew, C.-Y. Chou, K.-N. Chiang

    págs. 1658-1662

    

  • Torsion test applied for reballing and solder paste volume evaluation.

    W.C. Maia Filho, M. Brizoux, H. Frémont, Y. Danto

    págs. 1663-1667

    

  • Near-field EMC study to improve electronic component reliability.

    G. Duchamp, D. Castagnet, A. Meresse

    págs. 1668-1672

    

  • Investigation of moisture-induced failures of stacked-die package.

    H.S. Kim, H.G. Song

    págs. 1673-1679

    

  • Sequential environmental stresses tests qualification for automotive components.

    M.A. Bahi, P. Lecuyer, H. Frémont, J.-P. Landesman

    págs. 1680-1684

    

  • Characterization of moisture properties of polymers for IC packaging.

    X. Ma, K.M.B. Jansen, L.J. Ernst, W.D. van Driel, O. van der Sluis, G.Q. Zhang

    págs. 1685-1689

    

  • Revisiting power cycling test for better life-time prediction in traction.

    M. Mermet-Guyennet, X. Perpiñá, M. Piton

    págs. 1690-1695

    

  • New developments of THERMOS3, a tool for 3D electro-thermal simulation of smart power MOSFETs.

    A. Irace, G. Breglio, P. Spirito

    págs. 1696-1700

    

  • Local thermal cycles determination in thermosyphon-cooled traction IGBT modules reproducing mission profiles.

    X. Perpiñá, M. Piton, M. Mermet-Guyennet, X. Jordà, J. Millán

    págs. 1701-1706

    

  • Measurement of the transient junction temperature in MOSFET devices under operating conditions.

    D. Barlini, M. Ciappa, M. Mermet-Guyennet, W. Fichtner

    págs. 1707-1712

    

  • A study of the threshold-voltage suitability as an application-related reliability indicator for planar-gate non-punch-through IGBTs.

    A. Castellazzi, M. Ciappa, W. Fichtner, M. Piton, M. Mermet-Guyennet

    págs. 1713-1718

    

  • Degradation behavior of 600 V¿200 A IGBT modules under power cycling and high temperature environment conditions.

    M. Bouarroudj, Z. Khatir, J.P. Ousten, F. Badel, L. Dupont, S. Lefebvre

    págs. 1719-1724

    

  • Robustness test and failure analysis of IGBT modules during turn-off.

    Jesús Roberto Urresti Ibáñez, A. Castellazzi, M. Piton, J. Rebollo, M. Mermet-Guyennet, M. Ciappa

    págs. 1725-1729

    

  • Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions.

    A. Benmansour, S. Azzopardi, J.C. Martin, E. Woirgard

    págs. 1730-1734

    

  • Characterization and modelling of ageing failures on power MOSFET devices.

    B. Khong, M. Legros, P. Tounsi, PH. Dupuy, X. Chauffleur, C. Levade, G. Vanderschaeve, E. Scheid

    págs. 1735-1740

    

  • Reliability considerations for recent Infineon SiC diode releases.

    M. Holz, G. Hultsch, T. Scherg, R. Rupp

    págs. 1741-1745

    

  • The robustness of series-connected high power IGBT modules.

    C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo, B. Cascone, R. Manzo

    págs. 1746-1750

    

  • Monitoring fading rate of ultracapacitors using online characterization during power cycling.

    W. Lajnef, J.-M. Vinassa, O. Briat, H. El Brouji, E. Woirgard

    págs. 1751-1755

    

  • Study of a failure mechanism during UIS switching of planar PT-IGBT with current sense cell.

    G. Breglio, A. Irace, E. Napoli, P. Spirito, K. Hamada, T. Nishijima, T. Ueta

    págs. 1756-1760

    

  • Reliability of spring pressure contacts under environmental stress.

    F. Lang, U. Scheuermann

    págs. 1761-1766

    

  • Failure modes on low voltage power MOSFETs under high temperature application.

    L. Dupont, S. Lefebvre, M. Bouaroudj, Z. Khatir, J.C. Faugières

    págs. 1767-1772

    

  • Numerical analysis and comparative study of short circuit stress in IGBTs devices (IR, IXYS).

    LY. Benbaouche, A. Merabet, A. Zegadi

    págs. 1773-1778

    

  • Thermal fatigue effects on the temperature distribution inside IGBT modules for zone engine aeronautical applications.

    T. Lhommeau, X. Perpiñà, C. Martin, R. Meuret, M. Mermet-Guyennet, M. Karama

    págs. 1779-1783

    

  • Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities.

    X. Perpiñà, A. Castellazzi, M. Piton, M. Mermet-Guyennet, J. Millán

    págs. 1784-1789

    

  • Flexible active cycle stress testing of smart power switches.

    M. Glavanovics, H. Köck, V. Kosel, T. Smorodin

    págs. 1790-1794