Microelectronics reliability

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  Año 2007, Vol. 47, Número 9-11

  • Modeling of the breakdown mechanisms for porous copper/low-k process flows.

    C. Hong, L. Milor

    págs. 1478-1482

    

  • Molecular simulation on the material/interfacial strength of the low-dielectric materials.

    C.A. Yuan, O. van der Sluis, G.Q. Zhang (Kouchi), L.J. Ernst, W.D. van Driel, R.B.R. Van Silfhout

    págs. 1483-1491

    

  • Reliability assessment of multi-via Cu-damascene structures by wafer-level isothermal electromigration tests.

    A. Marras, M. Impronta, I. De. Munari, M.G. Valentini, A. Scorzoni

    págs. 1492-1496

    

  • Enhanced finite element modelling of Cu electromigration using ANSYS and matlab.

    W. Li, C.M. Tan

    págs. 1497-1501

    

  • Active ESD protection circuit design against charged-device-model ESD event in CMOS integrated circuits.

    S.-H. Chen, M.-D. Ker

    págs. 1502-1505

    

  • Reliability of interfacial adhesion in a multi-level copper/low-k interconnect structure.

    C.C. Chiu, H.-H. Chang, C.-C. Lee, C.C. Hsia, K.-N. Chiang

    págs. 1506-1511

    

  • Analysis of ESD protection structure behaviour after ageing as new approach for system level reliability of automotive power devices.

    M. Goroll, W. Kanert, R. Pufall, S. Aresu

    págs. 1512-1516

    

  • Dynamic laser stimulation techniques for advanced failure analysis and design debug applications.

    F. Beaudoin, K. Sanchez, P. Perdu

    págs. 1517-1522

    

  • Non destructive 3D chip inspection with nano scale potential by use of backside FIB and backscattered electron microscopy.

    R. Schlangen, U. Kerst, C. Boit, T. Malik, R. Jain, T. Lundquist

    págs. 1523-1528

    

  • Time resolved determination of electrical field distributions within dynamically biased power devices by spectral EBIC investigations.

    A. Pugatschow, R. Heiderhoff, L.J. Balk

    págs. 1529-1533

    

  • Three-dimensional nanometric sub-surface imaging of a silicon flip-chip using the two-photon optical beam induced current method.

    E. Ramsay, K.A. Serrels, M.J. Thomson, A.J. Waddie, R.J. Warburton, M.R. Taghizadeh, D.T. Reid

    págs. 1534-1538

    

  • Backside interferometric methods for localization of ESD-induced leakage current and metal shorts.

    V. Dubec, S. Bychikhin, D. Pogany, E. Gornik, T. Brodbeck, W. Stadler

    págs. 1539-1544

    

  • Application of time resolved emission techniques within the failure analysis flow.

    P. Egger, M. Grützner, C. Burmer, F. Dudkiewicz

    págs. 1545-1549

    

  • Advanced backside failure analysis in 65 nm CMOS technology.

    S. Bianic, S. Allemand, G. Kerrosa, P. Scafidi, D. Renard

    págs. 1550-1554

    

  • Finite element modeling of capacitive coupling voltage contrast.

    C.M. Tan, S. Yanuar, T.C. Chai

    págs. 1555-1560

    

  • Fault localization at high voltage devices using thermally induced voltage alteration (TIVA).

    M. Reissner

    págs. 1561-1564

    

  • OBIRCH analysis of electrically stressed advanced graphic ICs.

    J.Y. Liao, H.L. Marks, F. Beaudoin

    págs. 1565-1568

    

  • Localization of sensitive areas of power AC switch under thermal laser stimulation.

    S. Debleds, J.P. Rebrasse, L.D. De Morais, R. Frapreau, R. Perdreau, B. Morillon

    págs. 1569-1573

    

  • Device decapsulated (and/or depassivated) ¿ Retest ok ¿ What happened?.

    P. Jacob, G. Nicoletti, F. Hauf

    págs. 1574-1579

    

  • Room temperature observation of point defect on gold surface using thermovoltage mapping.

    A. Roy, C.M. Tan, S.J. O'Shea, K. Hippalgaonkar, W. Hofbauer

    págs. 1580-1584

    

  • A novel SIMS based approach to the characterization of the channel doping profile of a trench MOSFET.

    R. Zelsacher, A.C.G. Wood, E. Bacher, E. Prax, K. Sorschag, J. Krumrey, J. Baumgartl

    págs. 1585-1589

    

  • Long-term reliability of silicon bipolar transistors subjected to low constraints.

    A. Crosson, L. Escotte, Marise Bafleur, D. Talbourdet, L. Crétinon, P. Perdu, G. Perez

    págs. 1590-1594

    

  • 3D failure analysis in depth profiles of sequentially made FIB cuts.

    C.N. Mc Aueley, A. Rummel, F.W. Keating, S. Kleindiek

    págs. 1595-1598

    

  • Investigation of a new method for dopant characterization.

    J. Adrian, N. Rodriguez, F. Essely, G. Haller, C. Grosjean, A. Portavoce, C. Girardeaux

    págs. 1599-1603

    

  • A case study of defects due to process marginalities in deep sub-micron technology.

    H.-S Lin, C.-M. Chen, K.-H. Chen, A. Wang, C. Chao

    págs. 1604-1608

    

  • A new method to quantify retention-failed cells of an EEPROM CAST.

    C. Le Roux, L. Lopez, A. Firiti, J.L. Ogier, F. Lalande, R. Laffont, G. Micolau

    págs. 1609-1613

    

  • Thermal approach of defects generation on copper/organic dielectric interface due to SEM inspections.

    L.D. De Morais, F. Allanic, F. Roqueta, J.P. Rebrasse

    págs. 1614-1618

    

  • Reliability of semiconductor lasers used in current communication systems and sensing equipment.

    M. Fukuda

    págs. 1619-1624

    

  • High temperature electro-optical degradation of InGaN/GaN HBLEDs.

    M. Meneghini, L. Trevisanello, C. Sanna, G. Mura, M. Vanzi, G. Meneghesso, E. Zanoni

    págs. 1625-1629

    

  • Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC.

    M. Bouya, D. Carisetti, N. Malbert, N. Labat, P. Perdu, J.C. Clément, M. Bonnet, G. Pataut

    págs. 1630-1633