Microelectronics reliability

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  Año 2007, Vol. 47, Número 6

  • Negative bias temperature instability: What do we understand?.

    D.K. Schroder

    págs. 841-852

    

  • A comprehensive model for PMOS NBTI degradation: Recent progress.

    M.A. Alam, H. Kufluoglu, D. Varghese, S. Mahapatra

    págs. 853-862

    

  • Probing negative bias temperature instability using a continuum numerical framework: Physics to real world operation.

    S. Chakravarthi, A.T. Krishnan, V. Reddy, S. Krishnan

    págs. 863-872

    

  • NBTI product level reliability for a low-power SRAM technology.

    H. Puchner

    págs. 873-879

    

  • Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling.

    M. Houssa, M. Aoulaiche, S. De Gendt, G. Groeseneken, M.M. Heyns

    págs. 880-889

    

  • Deep level defects involved in MOS device instabilities.

    P.M. Lenahan

    págs. 890-898

    

  • Hydrogen transport in doped and undoped polycrystalline silicon.

    N.H. Nickel

    págs. 899-902

    

  • Hydrogen in MOSFETs ¿ A primary agent of reliability issues.

    S.T. Pantelides, L. Tsetseris, S.N. Rashkeev, X.J. Zhou, D.M. Fleetwood, R.D. Schrimpf

    págs. 903-912

    

  • Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs.

    E. Atanassova, A. Paskaleva

    págs. 913-923

    

  • Dynamic NBTI characteristics of PMOSFETs with PE-SiN capping.

    C.Y. Lu, H.C. Lin, Y.J. Lee

    págs. 924-929

    

  • Circuit level prediction of device performance degradation due to negative bias temperature stress.

    R. Kuroda, A. Teramoto, K. Watanabe, M. Mifuji, T. Yamaha, S. Sugawa, T. Ohmi

    págs. 930-936

    

  • Gate leakage properties of MOS devices with tri-layer high-k gate dielectric.

    W.B. Chen, J.P. Xu, P.T. Lai, Y.P. Li, S.G. Xu

    págs. 937-943

    

  • The impacts of high tensile stress CESL and geometry design on device performance and reliability for 90 nm SOI nMOSFETs.

    C.-M. Lai, Y.-K. Fang, C.-T. Lin, C.-W. Hsu, W.-K. Yeh

    págs. 944-952

    

  • Performance comparison of channel engineered deep sub-micrometer pseudo SOI n-MOSFETs.

    P. Sarkar, A. Mallik, C.K. Sarkar

    págs. 953-958

    

  • An investigation on the influence of electromagnetic interference induced in conducting wire of universal LEDs.

    H.-C. Tsai

    págs. 959-966

    

  • Performance and reliability improvement of flash device by a novel programming method.

    C.-H. Ho, K.-S. Chang-Liao, Y.-N. Huang, T.-K. Wang, T.C. Lu

    págs. 967-971

    

  • Iterative algorithm for automatic alignment by object transformation.

    H.T. Kim, H.J. Yang, S.Y. Baek

    págs. 972-985

    

  • A reliability study of the lead-free solder connections of miniature chip components on hybrid circuits.

    D. Rocak, S. Macek, J. Sitek, M. Hrovat, K. Bukat, Z. Drozd

    págs. 986-995