Microelectronics reliability

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  Año 2009, Vol. 49, Número 8

  • Guest Editorial: 2008 EuroSimE international conference on thermal, mechanical and multi-physics simulation and experiments in micro-electronics and micro-systems.

    A. Wymyslowski

    págs. 823-824

    

  • Prognostication of system-state in lead-free electronics equipment under cyclic and steady-state thermo-mechanical loads.

    P. Lall, M. Hande, C. Bhat, V. More, R. Vaidya

    págs. 825-838

    

  • Simulation based analysis of secondary effects on solder fatigue.

    R. Dudek, R. Doering, C. Bombach, B. Michel

    págs. 839-845

    

  • Solder interconnect reliability under drop impact loading conditions using High-speed Cold Bump Pull.

    J.J.M. Zaal, H.P. Hochstenbach, W.D. van Driel, G.Q. Zhang

    págs. 846-852

    

  • Numerical analysis of delamination and cracking phenomena in multi-layered flexible electronics.

    O. van der Sluis, R.A.B. Engelen, P.H.M. Timmermans, G.Q. Zhang

    págs. 853-860

    

  • Experimental investigations and model study of moisture behaviors in polymeric materials.

    X.J. Fan, S.W.R. Lee, Q. Han

    págs. 861-871

    

  • Modeling and characterization of molding compound properties during cure.

    K.M.B. Jansen, C. Qian, L.J. Ernst, C. Bohm, A. Kessler, H. Preu, M. Stecher

    págs. 872-876

    

  • Performance properties in thick film silicate dielectric layers using molecular modeling

    N. Iwamoto, A. Krishnamoorthy, R. Spear

    págs. 877-884

    

  • A CMOS circuit for evaluating the NBTI over a wide frequency range.

    R. Fernández-García, B. Kaczer, G. Groeseneken

    págs. 885-891

    

  • Trend transformation of drain-current degradation under drain-avalanche hot-carrier stress for CLC n-TFTs.

    Z.-Y. Hsieh, M.C. Wang, C. Chen, J.-M. Shieh, Y.-T. Lin, S.-Y. Chen, H.-S. Huang

    págs. 892-896

    

  • Sub-threshold behavior of long channel undoped cylindrical surrounding-gate MOSFETs.

    W. Bian, J. He, L. Zhang, J. Zhang, M. Chan

    págs. 897-903

    

  • A detailed study of current�voltage characteristics in Au/SiO2/n-GaAs in wide temperature range.

    H. Altuntas, S. Altindal, H. Shtrikman, S. Ozcelik

    págs. 904-911

    

  • A study on the improved programming characteristics of flash memory with Si3N4/SiO2 stacked tunneling dielectric.

    L. Liu, J.P. Xu, L.L. Chen, P.T. Lai

    págs. 912-915

    

  • The damped dynamics of printed circuit board and analysis of distorted and deformed half-sine excitation.

    E.H. Wong, Y.-W. Mai

    págs. 916-923

    

  • SCRAP: Sequential circuits reliability analysis program.

    S.J. Seyyed Mahdavi, K. Mohammadi

    págs. 924-933