Microelectronics reliability

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  Año 2019, Número 98

  • Double tricrystal nucleation behavior in Pb-free BGA solder joints

    Jing Han, Fu Guo

    • Resumen

    págs. 1-9

    

  • Investigation on multi-temperature short-term stress and creep relaxation of Sn-Ag-Cu-In solder alloys under the effect of rotating magnetic field

    A.A. Ibrahiem, A.A. El-Daly

    • Resumen

    págs. 10-18

    

  • Corrosion on automobile printed circuit broad

    Tsan-Hsien Tseng, A.T. Wu

    • Resumen

    págs. 19-23

    

  • Junction temperature control of UV-C LEDs based on a thermoelectric cooler device

    P. Fredes, U. Raff, E. Gramsch, J. Pascal, J. Cuenca

    • Resumen

    págs. 24-30

    

  • Two dimensional Green's function solution of threshold for junction less field effect transistors at low drain voltage

    Seyed Hosseini, Abdollah Eskandarian, Abbas Ghadimi

    • Resumen

    págs. 31-41

    

  • Contrast of latch-up induced by pulsed gamma rays in CMOS circuits after neutron irradiation and TID accumulation

    Ruibin Li, Chaohui He, Wei Chen, Yan Liu, Junlin Li, Xiaoqiang Guo, Shanchao Yang

    • Resumen

    págs. 42-48

    

  • Residual stress and warpage of AMB ceramic substrate studied by finite element simulations

    Shanshan Zhang, Huisheng Yang, Kewei Gao, Luchun Yan, Xiaolu Pang, A.A. Volinsky

    • Resumen

    págs. 49-55

    

  • Analysis of bipolar amplification due to heavy-ion irradiation in 45 nm FDSOI MOSFET with thin BOX and ground plane

    Pasupathy K.R., Bindu B.

    • Resumen

    págs. 56-62

    

  • Statistical simulation of self-heating induced variability and reliability with application to Nanosheet-FETs based SRAM

    Wangyong Chen, Linlin Cai, Kunliang Wang, Xing Zhang, Xiaoyan Liu, Gang Du

    • Resumen

    págs. 63-68

    

  • Instantaneous Mean-Time-To-Failure (MTTF) estimation for checkpoint interval computation at run time

    Mohamad Imran bin Bandan, Subhasis Bhattacharjee, Suriati Khartini Jali, Dhiraj K. Pradhan

    • Resumen

    págs. 69-77

    

  • Wireless sEMG-based identification in a virtual reality environment

    Xiaoou Li, Zhiyong Zhou, Wanyang Liu, Mengjie Ji

    • Resumen

    págs. 78-85

    

  • A hybrid frequency-time-domain approach to determine the vibration fatigue life of electronic devices

    Thomas Schriefer, Maximilian Hofmann

    • Resumen

    págs. 86-94

    

  • A review: Formation of voids in solder joint during the transient liquid phase bonding process - Causes and solutions

    Omid Mokhtari

    • Resumen

    págs. 95-105

    

  • Thermal fracture parameter analysis of MEMS multilayer structures based on the generalized thermoelastic theory

    Zhang Long, Zhang Xiaomin, Song Jiyun, Zheng Hengwei

    • Resumen

    págs. 106-111

    

  • Wetting of amorphous and partial crystalline Co73Si10B17 by Sn and Sn-based lead-free solders

    Qiaoli Lin, Changsheng Ye, Ran Sui, Wenjuan Ci

    • Resumen

    págs. 112-118

    

  • New perspectives in defect centric model for NBTI reliability

    D. Nouguier, G. Ghibaudo, X. Federspiel, M. Rafik, D. Roy

    • Resumen

    págs. 119-123

    

  • Bending reliability of flexible transparent electrode of gravure offset printed invisible silver-grid laminated with conductive polymer

    Masato Ohsawa, Natsuki Hashimoto

    • Resumen

    págs. 124-130

    

  • The strong effect on MEMS switch reliability of film deposition conditions and electrode geometry

    Changho Oh, Charles B. Stovall, Wassim Dhaouadi, Robert W. Carpick, Maarten P. de Boer

    • Resumen

    págs. 131-143

    

  • An oxygen vacancy mediated Ag reduction and nucleation mechanism in SiO2 RRAM devices

    K. Patel, J. Cottom, Michel Bosman, A.J. Kenyon, Alexander L. Shluger

    • Resumen

    págs. 144-152

    

  • A new creep fatigue model for solder joints

    E.H. Wong

    • Resumen

    págs. 153-160

    

  • E-field induced keep-out zone determination method of through-silicon vias for 3-D ICs

    Kibeom Kim, Junsung Choi, Seongho Woo, Jaeyoung Cho, Seungyoung Ahn

    • Resumen

    págs. 161-164