Microelectronics reliability

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  Año 2008, Vol. 48, Número 7

  • Forensic characterization of thin film resistor degradation.

    W.J. Roesch

    págs. 958-964

    

  • Estimating effective dielectric thickness for capacitors with extrinsic defects by a statistical method.

    C.S. Whitman

    págs. 965-973

    

  • Intrinsic reliability of a 12 V field plate pHEMT.

    C. Gaw, T. Arnold, K. Moore

    págs. 974-984

    

  • A wafer-level approach to device lifetesting.

    D.J.M. Hamada, W.J. Roesch

    págs. 985-989

    

  • Acceleration factors for THB induced degradation of AlGaAs/InGaAs pHEMT devices.

    L. Marchut, C.S. Whitman

    págs. 990-994

    

  • Evaluation of RF electrostatic discharge (ESD) protection in 0.18-µm CMOS technology.

    X. Du, S. Dong, Y. Han, J.J. Liou, M. Huo, Y. Li, Q. Cui, D. Huang, D. Wang

    págs. 995-999

    

  • Total ionizing dose effects in shallow trench isolation oxides.

    F. Faccio, H.J. Barnaby, X.J. Chen, D.M. Fleetwood, L. Gonella, M. McLain, R.D. Schrimpf

    págs. 1000-1007

    

  • Impact of bias condition on 1/f noise of dual-gate depletion type MOSFET in linear region and consequences for noise diagnostic application and modelling.

    M. Videnovic-Misic, M.M. Jevtic

    págs. 1008-1014

    

  • Noise and reliability in simulated thin metal films.

    S.D. Pascoli, G. Iannaccone

    págs. 1015-1020

    

  • Simulation of transient thermal states in layered electronic microstructures.

    W. Kalita, D. Klepacki, M. Weglarski

    págs. 1021-1026

    

  • Temperature dependence of electrical parameters of SMD ferrite components for EMI suppression.

    G. Stojanovic, M. Damnjanovic, L. Zivanov

    págs. 1027-1032

    

  • Pressure-induced tin whisker formation.

    T. Shibutani, Q. Yu, M. Shiratori, M.G. Pecht

    págs. 1033-1039

    

  • Effect of underfill filler settling on thermo-mechanical fatigue analysis of flip-chip eutectic solders.

    C.-f. Chen

    págs. 1040-1051

    

  • Material properties of anisotropic conductive films (ACFs) and their flip chip assembly reliability in NAND flash memory applications.

    K.-W. Jang, C.-K. Chung, W.-S. Lee, K.-W. Paik

    págs. 1052-1061

    

  • 3D thermal model to investigate component displacement phenomenon during reflow soldering.

    B. Illés, G. Harsányi

    págs. 1062-1068

    

  • Correlation studies for component level ball impact shear test and board level drop test.

    E.H. Wong, R. Rajoo, S.K.W. Seah, C.S. Selvanayagam, W.D. van Driel, J.F.J.M. Caers, X.J. Zhao, N. Owens, L.C. Tan, M. Leoni, P.L. Eu, Y.-S. Lai, C.-L. Yeh

    págs. 1069-1078

    

  • Investigation of mechanical shock testing of lead-free SAC solder joints in fine pitch BGA package.

    Y.T. Chin, P.K. Lam, H.K. Yow, T.Y. Tou

    págs. 1079-1086

    

  • Failure analysis of pad-height effects in the fine-pitch interconnection of the anisotropic conductive films.

    C.-M. Lin, T.-C. Lin, T.-H. Fang, K.-s. Chao

    págs. 1087-1092

    

  • Test generation at the algorithm-level for gate-level fault coverage.

    E. Bareisa, V. Jusas, K. Motiejunas, R. Seinauskas

    págs. 1093-1101

    

  • Yield challenges in wafer stacking technology.

    E.-K. Kim, J. Sung

    págs. 1102-1105